Modeling of the RF Coaxial TSV Configuration Inside the Silicon Interposer With Embedded Cooling Cavity

Li, Wei; Liu, Zongxi; Qian, Wenbing; Wang, Zhenyu; Wang, Wei; Zhao, Yongzhi; Zhang, Xiaobin

doi:10.1109/tcpmt.2021.3135558

Cited by 15 publications

(4 citation statements)

References 44 publications

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“…According to [ 14 ], it can be known that

tends to 0 at the frequency infinity. This work considers the THz band, which suggests

= 0.03 pF, and thus according to formula ( 1 ), T > 3.5

is obtained.…”

Section: Physical Realization Of Arbitrary Bandwidth Ssigw Filter Bas...mentioning

confidence: 99%

“…Indeed, some passive devices based on TSV have been proposed [3,11]. Recently, due to the large-scale expansion of semiconductor technology and emerging markets such as automotive radar and 5G, TSV technology has been gradually extended to MMW and THz fields [12][13][14]. In 2022, a silicon substrate integrated gap waveguide (SSIGW) utilizing TSV was proposed to address the aforementioned issues, and it has been successfully applied in the design of a 6G filtering metalens antenna [15].…”

Section: Introductionmentioning

confidence: 99%

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A Design Method and Application of Meta-Surface-Based Arbitrary Passband Filter for Terahertz Communication

Hou,

Wang,

Lin

et al. 2024

Sensors

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A meta-surface-based arbitrary bandwidth filter realization method for terahertz (THz) future communications is presented. The approach involves integrating a meta-surface-based bandstop filter into an ultra-wideband (UWB) bandpass filter and adjusting the operating frequency range of the meta-surface bandstop filter to realize the design of arbitrary bandwidth filters. It effectively addresses the complexity of designing traditional arbitrary bandwidth filters and the challenges in achieving impedance matching. To underscore its practicality, the paper employs silicon substrate integrated gap waveguide (SSIGW) and this method to craft a THz filter. To begin, design equations for electromagnetic band gap (EBG) structures were developed in accordance with the requirements of through-silicon via (TSV) and applied to the design of the SSIGW. Subsequently, this article employs equivalent transmission line models and equivalent circuits to conduct theoretical analyses for both the UWB passband and the meta-surface stopband portions. The proposed THz filter boasts a center frequency of 0.151 THz, a relative bandwidth of 6.9%, insertion loss below 0.68 dB, and stopbands exceeding 20 GHz in both upper and lower ranges. The in-band group delay is 0.119 ± 0.048 ns. Compared to reported THz filters, the SSIGW filter boasts advantages such as low loss and minimal delay, making it even more suitable for future wireless communication.

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“…According to [ 14 ], it can be known that

tends to 0 at the frequency infinity. This work considers the THz band, which suggests

= 0.03 pF, and thus according to formula ( 1 ), T > 3.5

is obtained.…”

Section: Physical Realization Of Arbitrary Bandwidth Ssigw Filter Bas...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Design Method and Application of Meta-Surface-Based Arbitrary Passband Filter for Terahertz Communication

Hou,

Wang,

Lin

et al. 2024

Sensors

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“…Li presented a coaxial TSV structure with an embedded cooling cavity in the silicon interposer. This configuration achieves excellent electrical transmission and enhances heat dissipation, effectively reducing thermal stress [21].…”

Section: Thermal Reliabilitymentioning

confidence: 99%

Research on the Reliability of Advanced Packaging under Multi-Field Coupling: A Review

Wang,

Liu,

Huo

et al. 2024

Micromachines

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With the advancement of Moore’s Law reaching its limits, advanced packaging technologies represented by Flip Chip (FC), Wafer-Level Packaging (WLP), System in Package (SiP), and 3D packaging have received significant attention. While advanced packaging has made breakthroughs in achieving high performance, miniaturization, and low cost, the smaller thermal space and higher power density have created complex physical fields such as electricity, heat, and stress. The packaging interconnects responsible for electrical transmission are prone to serious reliability issues, leading to the device’s failure. Therefore, conducting multi-field coupling research on the reliability of advanced packaging interconnects is necessary. The development of packaging and the characteristics of advanced packaging are reviewed. The reliability issues of advanced packaging under thermal, electrical, and electromagnetic fields are discussed, as well as the methods and current research of multi-field coupling in advanced packaging. Finally, the prospect of the multi-field coupling reliability of advanced packaging is summarized to provide references for the reliability research of advanced packaging.

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“…As the vertical interconnections provided by TSVs pass through the silicon substrate, the performance of the 3-D ICs suffers from serious signal losses especially at higher frequency, including the crosstalk, the simultaneous switch nose, and the electromagnetic interference [6]. Due to the highly vertical integration density, these losses are generally induced by the parasitic effects of TSV as well as the inherent loss of silicon substrate [7], [8].…”

Section: Introductionmentioning

confidence: 99%

Frequency-Dependent Characteristics and Parametric Modeling of the Silicon Substrate in TSV-Based 3-D ICs

Zhao

Fan

2022

IEEE Access

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This paper presents an in-depth investigation of the silicon substrate characteristics based on frequency-dependent parameters in the through-silicon via (TSV)-based 3-D ICs. It is the first time to define the frequency bands accurately on the ground of a quantitative standard of calibration to represent different characteristics of the silicon substrate. Moreover, by converting the conventional model of a TSV pair into an RC parallel circuit, a simplified model is established which makes the analysis of the silicon substrate concise associated with the frequency variation. To further reveal the influence of silicon substrate on the signal transmission between adjacent TSVs, relevant impedance parameters of the silicon substrate are converted into the impedance (Z) matrix for parametric modeling, which is validated by 3D full-wave simulations. This work contributes a systematic examination of the silicon substrate characteristics with the variation of frequency, and provides significant guidance for parametric analysis and modeling in TSVbased 3-D ICs.

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Modeling of the RF Coaxial TSV Configuration Inside the Silicon Interposer With Embedded Cooling Cavity

Cited by 15 publications

References 44 publications

A Design Method and Application of Meta-Surface-Based Arbitrary Passband Filter for Terahertz Communication

A Design Method and Application of Meta-Surface-Based Arbitrary Passband Filter for Terahertz Communication

Research on the Reliability of Advanced Packaging under Multi-Field Coupling: A Review

Frequency-Dependent Characteristics and Parametric Modeling of the Silicon Substrate in TSV-Based 3-D ICs

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