Research on the Reliability of Advanced Packaging under Multi-Field Coupling: A Review

Wang, Yongkun; Liu, Haozheng; Huo, Linghua; Li, Haobin; Tian, Wenchao; Ji, Haoyue; Chen, Si

doi:10.3390/mi15040422

Micromachines

2024

DOI: 10.3390/mi15040422

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Research on the Reliability of Advanced Packaging under Multi-Field Coupling: A Review

Yongkun Wang,

Haozheng Liu,

Linghua Huo

et al.

Abstract: With the advancement of Moore’s Law reaching its limits, advanced packaging technologies represented by Flip Chip (FC), Wafer-Level Packaging (WLP), System in Package (SiP), and 3D packaging have received significant attention. While advanced packaging has made breakthroughs in achieving high performance, miniaturization, and low cost, the smaller thermal space and higher power density have created complex physical fields such as electricity, heat, and stress. The packaging interconnects responsible for electr… Show more

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Cited by 2 publications

References 79 publications

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Preparation of high-performance multilayer circuits by controlling the diffusion of Ag in borosilicate glass-ceramics through the addition of SiO2

Fang,

Chen,

et al. 2024

Ceramics International

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Preparation of high-performance multilayer circuits by controlling the diffusion of Ag in borosilicate glass-ceramics through the addition of SiO2

Fang,

Chen,

et al. 2024

Ceramics International

View full text Add to dashboard Cite

Diffusion Barrier Performance of Ni-W Layer at Sn/Cu Interfacial Reaction

Yao,

Li,

Shang

et al. 2024

Materials

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As the integration of chips in 3D integrated circuits (ICs) increases and the size of micro-bumps reduces, issues with the reliability of service due to electromigration and thermomigration are becoming more prevalent. In the practical application of solder joints, an increase in the grain size of intermetallic compounds (IMCs) has been observed during the reflow process. This phenomenon results in an increased thickness of the IMC layer, accompanied by a proportional increase in the volume of the IMC layer within the joint. The brittle nature of IMC renders it susceptible to excessive growth in small-sized joints, which has the potential to negatively impact the reliability of the welded joint. It is therefore of the utmost importance to regulate the formation and growth of IMCs. The following paper presents the electrodeposition of a Ni-W layer on a Cu substrate, forming a barrier layer. Subsequently, the barrier properties between the Sn/Cu reactive couples were subjected to a comprehensive and systematic investigation. The study indicates that the Ni-W layer has the capacity to impede the diffusion of Sn atoms into Cu. Furthermore, the Ni-W layer is a viable diffusion barrier at the Sn/Cu interface. The “bright layer” Ni2WSn4 can be observed in all Ni-W coatings during the soldering reflow process, and its growth was almost linear. The structure of the Ni-W layer is such that it reduces the barrier properties that would otherwise be inherent to it. This is due to the “bright layer” Ni2WSn4 that covers the original Ni-W barrier layer. At a temperature of 300 °C for a duration of 600 s, the Ni-W barrier layer loses its blocking function. Once the “bright layer” Ni2WSn4 has completely covered the original Ni-W barrier layer, the diffusion activation energy for Sn diffusion into the Cu substrate side will be significantly reduced, particularly in areas where the distortion energy is concentrated due to electroplating tension. Both the “bright layer” Ni2WSn4 and Sn will grow rapidly, with the formation of Cu-Sn intermetallic compounds (IMCs). At temperatures of 250 °C, the growth of Ni3Sn4-based IMCs is controlled by grain boundaries. Conversely, the growth of the Ni2WSn4 layer (consumption of Ni-W layer) is influenced by a combination of grain boundary diffusion and bulk diffusion. At temperatures of 275 °C and 300 °C, the growth of Ni3Sn4-based IMCs and the Ni2WSn4 layer (consumption of Ni-W layer) are both controlled by grain boundaries. The findings of this study can inform the theoretical design of solder joints with barrier layers as well as the selection of Ni-W diffusion barrier layers for use in different soldering processes. This can, in turn, enhance the reliability of microelectronic devices, offering significant theoretical and practical value.

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Research on the Reliability of Advanced Packaging under Multi-Field Coupling: A Review

Cited by 2 publications

References 79 publications

Preparation of high-performance multilayer circuits by controlling the diffusion of Ag in borosilicate glass-ceramics through the addition of SiO2

Preparation of high-performance multilayer circuits by controlling the diffusion of Ag in borosilicate glass-ceramics through the addition of SiO2

Diffusion Barrier Performance of Ni-W Layer at Sn/Cu Interfacial Reaction

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