Modeling of the CoolMOS/sup TM/ transistor - Part I: Device physics

Daniel, B.J.; Parikh, Chetan D.; Patil, Mukesh D.

doi:10.1109/16.998603

Cited by 24 publications

(13 citation statements)

References 9 publications

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“…Physically, the drift region behavior suggests a model with two JFETs in series, one for the "neck" region and the other for the "pillar" region. Analytical modeling of the "pillar" part of the drift region was also done in [8], which confirmed that its -equation is similar to that of a JFET. The structure of the CoolMOS™ transistor and simulation results described in [8] series with a "neck" JFET, followed by the "pillar" JFET.…”

Section: Basic Modelmentioning

confidence: 54%

“…A simple model was first developed, based on simulation results obtained with PISCES [8]. The simulated device is shown in Fig.…”

Section: Basic Modelmentioning

confidence: 99%

“…The doping densities in the drift region were assumed to be cm in the n and p strips. The main observations related to circuit modeling were the following [8]. a) For low gate voltages, the current saturates at high , due to the saturation of the "intrinsic" MOSFET and b) At higher gate voltages, the -characteristics show "quasisaturation," which is a result of velocity saturation in the n drift region.…”

Section: Basic Modelmentioning

confidence: 99%

“…iii) The effects of velocity saturation/mobility degradation have not been explicitly included in the model. iv) As discussed in [8], a more accurate representation of the drift region would involve two JFETs in series, one for the "neck" region and the other for the "pillar" region.…”

Section: Improvements In the Basic Modelmentioning

confidence: 99%

“…Analytic treatment of the superjunction has been presented in [3]- [7]. In an accompanying paper [8], we have investigated the device operation in the off state and in the on state, using device simulation. The physical phenomena responsible for the higher breakdown voltage of the CoolMOS™ transistor and quasi saturation of the drain current were discussed.…”

mentioning

confidence: 99%

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Modeling of the CoolMOS/sup TM/ transistor. II. DC model and parameter extraction

Daniel

Parikh²,

Patil³

2002

IEEE Trans. Electron Devices

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Abstract-An accurate dc model for the CoolMOS™ power transistor is presented. An elementary model consisting of an intrinsic MOSFET and a JFET to represent the drift region, is first discussed and it is pointed out that this is a rather poor model, needing improvements. Using device simulation results, it is shown that, by replacing the gate and drain voltages of the intrinsic MOSFET by appropriate "effective" voltages, a highly accurate model is obtained. A systematic procedure for parameter extraction is described and an implementation of the new model in the form of a SPICE subcircuit is given.

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Section: Basic Modelmentioning

confidence: 54%

“…A simple model was first developed, based on simulation results obtained with PISCES [8]. The simulated device is shown in Fig.…”

Section: Basic Modelmentioning

confidence: 99%

Section: Basic Modelmentioning

confidence: 99%

Section: Improvements In the Basic Modelmentioning

confidence: 99%

mentioning

confidence: 99%

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Modeling of the CoolMOS/sup TM/ transistor. II. DC model and parameter extraction

Daniel

Parikh²,

Patil³

2002

IEEE Trans. Electron Devices

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Superjunction

Napoli

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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Power semiconductor devices control the energy flow in virtually every electric and electronic system. Most commonly recognized applications are: automotive, traction, consumer electronics, air conditioning, electric engines. The improvement in power devices results in improved power management circuits with increased efficiency. Reduced environmental pollution, reduced cost, reduced size, and longer battery life are only few of the advantages that derive from advancements in the design of power semiconductor devices. Dating from the invention of the tranistor, a continuous research and development activity, driven by the huge market request, provided new device concepts, advanced design techniques, and new materials that largely improved the performance of the power semiconductor devices. A big step towards the ideal device is the introduction of the SuperJunction (SJ) concept in 1997 with inherent drastic reduction of the ON state resistance and of the conduction losses for power devices. SJ is not an improvement due to the use of a new material. It is an improvement derived by an innovative design concept for the sustaining layer that, instead of exhibiting a one dimensional structure, is manufactured with a complex two or three dimensional structure. SJ design technique is therefore applicable to different power devices but requires a design approach that differs from the one used for conventional power devices.

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Modelling CoolMOSC3 transistor characteristics in SPICE

Górecki

Zarębski

2009

Int J Numerical Modelling

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SUMMARYIn this paper three models of CoolMOSC3 transistors worked out by Infineon Technologies, dedicated for SPICE, are presented and investigated. These models are verified experimentally both for dc and ac device operating conditions. The advantages and drawbacks of the investigated models are shown and discussed. The device operating conditions, at which the models are of acceptable accuracy, are identified.

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Modeling of the CoolMOS/sup TM/ transistor - Part I: Device physics

Cited by 24 publications

References 9 publications

Modeling of the CoolMOS/sup TM/ transistor. II. DC model and parameter extraction

Modeling of the CoolMOS/sup TM/ transistor. II. DC model and parameter extraction

Superjunction

Modelling CoolMOSC3 transistor characteristics in SPICE

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