Modeling of subwavelength resist grating features fabricated by evanescent waves interference

Murukeshan, Vadakke Matham; Chua, Jeun Kee; Tan, Sia Kim; Lin, Qun Ying

doi:10.1117/1.3041735

Cited by 5 publications

(3 citation statements)

References 20 publications

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“…And it was demonstrated that the finer experimental results are easy to achieve at smaller incident angle [101]. Using this type of lithography system, 1D patterns using two-beam interference and 2D patterns using four-beam interference have been demonstrated [101][102][103][104][105][106][107][108][109][110][111]. The interferential beams are The plasmonic head flying 20 nm above the rotating substrate.…”

Section: Plasmonic Direct Writing Nanolithographymentioning

confidence: 99%

Plasmonic Nanolithography: A Review

Xie

Wang

et al. 2011

Plasmonics

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Surface plasmon polaritons (SPPs) has attracted great attention in the last decade and recently it has been successfully applied to nanolithography due to its ability of beyond diffraction limit. This article reviews the recent development in plasmonic nanolithography, which is considered as one of the most remarkable technology for next-generation nanolithography. Nanolithography experiments were highlighted on the basis of SPPs effect. Three types of plasmonic nanolithography methods: contact nanolithography, planar lens imaging nanolithography, and direct writing nanolithography were reviewed in detail, and their advantages and shortages are analyzed and compared, respectively. Finally, the development trend of plasmonic nanolithography is suggested.

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Section: Plasmonic Direct Writing Nanolithographymentioning

confidence: 99%

Plasmonic Nanolithography: A Review

Xie

Wang

et al. 2011

Plasmonics

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“…Where  the wavelength of light,  is the evanescent wave amplitude relative to the incident light amplitude, proposed and studied this technique for lithography application using UV and DUV laser sources, thereby realizing even smaller features (high resolution) [110][111][112].…”

Section: Evanescent Wave Lithographymentioning

confidence: 99%

“…Furthermore, it is important to understand how intensity distribution correlates to the resultant resist features in the lithography process. In this context, various photoresist models (resist topology) have been proposed to compute the positional intensity values and corresponding photoresist development rate [110].…”

Section: Theoretical Analysismentioning

confidence: 99%