Modeling of novel resist technologies

Long, Luke; Neureuther, Andrew R.; Naulleau, Patrick

doi:10.1117/12.2515144

Cited by 5 publications

(6 citation statements)

References 12 publications

(25 reference statements)

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“…Alongside matching surface energy and chemistry of the underlayer, initial experimental data indicates that absorption might be equally important, matching the predictions of some simulation. [8] We present here a short study on the impact the absorption of the underlayer has on the LWR, and dose-to-size of a single formulation of the MTR Gen1. Experimental underlayers were prepared by thermally curing the crosslinker component of the xMT, Gen1, and a high-opacity variant of the resist, with all other resist components removed.…”

Section: Underlayer Optimisationmentioning

confidence: 99%

“…These events can contribute beneficially or detrimentally towards resolution and roughness in the features patterned. [8,9] Not only that, the underlayer choice also affects the metrology introducing optical contrast variations depending on the underlayer used. [10] Finally, the film thickness of the photoresist and underlayers used in high-NA tools will have to scale to accommodate the reduced depth of focus of the new tools.…”

Section: Introductionmentioning

confidence: 99%

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EUV lithography patterning using multi-trigger resist

Popescu¹,

O'Callaghan²,

McClelland³

et al. 2023

Advances in Patterning Materials and Processes XL

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Research and development of EUV photoresists capable of supporting future requirements such as high-NA EUV continues. It is foreseen that, to contend with much higher photon-shot noise, resists will require high EUV absorbance to offset the need for thin films in high-NA, where depth of focus may be less than 20nm. We are developing a photoresist based on the multi-trigger concept, which seeks to suppress roughness using a new photoresist mechanism, and which is based on molecular rather than polymeric materials to maximize resolution. MTR Resist absorbance of greater than 18 μm-1 has been measured. Here we present recent NXE3400 results where, by modifying the PAG to optimize the reactions rates in the MTR mechanism, we have reduced the dose requirement compared to the orthodox high opacity MTR resists previously presented. Lines of 14 nm width at p28 nm can be patterned at a dose between 21 mJ/cm2 and 48 mJ/cm2 dependent on formulation ratio, with optimum LWR (3.9 nm, biased) occurring at 43 mJ/cm2 with a film thickness of 20.7 nm. Similarly, we present p34 pillars patterned between 21 mJ/cm2 and 59 mJ/cm2 doses for 17 nm diameter pillars, with a minimum LCDU for 19 nm diameter pillars of 3.05 nm occurring with a 21.7 nm FT at 58 mJ/cm2. The same resist can pattern p36 pillars at 52 mJ/cm2 with an LCDU of 3.44 nm at 18 nm diameter with no measured defects between 15.9 nm and 18.1 nm diameter. The impact of the substrate (such as use of various organic underlayers or SOG layers) on defectivity issues such as bridging or falling pillars will be presented here.

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Section: Underlayer Optimisationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

EUV lithography patterning using multi-trigger resist

Popescu¹,

O'Callaghan²,

McClelland³

et al. 2023

Advances in Patterning Materials and Processes XL

View full text Add to dashboard Cite

show abstract

“…While the core stochastic details of the model mirror those of the 2D MPPM, and are detailed elsewhere, [5][6][7] a few of the key features will be summarized here. The MPPM is an "error" propagation model, whereby the initial distribution of resist components and photons are treated as random variables (RVs).…”

Section: Model Detailsmentioning

confidence: 99%

Three-dimensional modeling of EUV photoresist using the multivariate Poisson propagation model

Long

Neureuther

Naulleau

2021

J. Micro/Nanopattern. Mats. Metro.

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Background: As target feature sizes for EUV lithography shrink, it is becoming ever more important to understand the intricate details of photoresist materials, including the role of the "third dimension"-the dimension perpendicular to the wafer. With resist thicknesses shrinking toward the single-digit nanometer scale alongside target linewidths, small changes in resist performance in this dimension will have a greater overall effect on pattern quality.Aim: To use modeling to understand the effect that the third dimension has on resist performance, in particular the interplay between the third dimension and resist stochastics.Approach: We developed a three-dimensional version of the multivariate Poisson propagation model, a stochastic resist simulator. As a test case for the model, we explore the role of acid diffusion in the so-called third dimension by simulating 10 5 vias at a series of z-blur conditions.Results: Our model suggests that increased z-blur yields an improvement in both dose to size and pattern uniformity without sacrificing resolution. Conclusions:We have developed a 3D resist model that can simulate large numbers of contacts. Early results from the 3D model show improved patterning performance can be achieved by increasing the z-blur.

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“…The generation of secondary electrons in the underlayer may also be important. [8,9] Furthermore, the underlayer choice also affects the metrology introducing contrast variations, depending on the underlayer used, in non-intuitive ways. [10] Finally, as industry moves towards the implementation of high-NA EUV to enable further improvements in resolution, it will become increasingly important to consider the overall thickness of the resist/ underlayer stack.…”

Section: Introductionmentioning

confidence: 99%

EUV lithography patterning using multi-trigger resist

Popescu,

O'Callaghan,

McClelland

et al. 2024

Advances in Patterning Materials and Processes XLI

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Irresistible Materials is developing a novel photoresist for EUV lithography including high-NA patterning. A major concern for the key research area of high-NA EUV resists is that stochastics in such resist materials can lead both to roughness and defects causing failures, which means high-NA resists remain a priority research area. We are developing a photoresist based on the multi-trigger concept, which seeks to suppress line edge roughness using a new photoresist mechanism, and which is based on molecular rather than polymeric materials to maximize resolution. It also has relatively high EUV absorbance to increase photon capture despite the need for thin films in high-NA due to limited depth-of-focus.By modifying the MTM molecule, crosslinker and PAG, both individually and in combination, we can optimize the reaction rates in the MTR mechanism. Different combinations have been designated Gen 2.1 to Gen 2.6 and show an LWR improvement in Gen 2.4, 2.5 and 2.6 combinations. Here we present the lithographic performance at pitch 28nm dense line/space where 14.1 wide lines were patterned at 59 mJ/cm 2 with an unbiased LER of 2.09 nm using a Gen 2.4 resist. We show hexagonal pillar results: pitch 32 nm patterned at 42 mJ/cm 2 to obtain a pillar diameter of 16 nm with an unbiased LCDU of 2.8 nm; and additionally p32 pillars of 16 nm diameter were patterned at 74 mJ/cm 2 with an unbiased LCDU of 2.7nm; and of 18.5 nm diameter at 82 mJ/cm 2 with an unbiased LCDU of 2.3nm. We also show data which shows using a Gen 2.6 resist can reduce the LCDU of p32 hex pillars by 0.2 nm and biased LWR of p28 l/s by 0.3 nm compared to a comparable Gen 2.4 resist.Performance improvements such as reduced roughness and defectivity can also be shown to be affected by choices such as underlayer and developer. Additionally, the modification of the developer can be shown to influence the patterning performance of the resist at high resolution.

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Modeling of novel resist technologies

Cited by 5 publications

References 12 publications

EUV lithography patterning using multi-trigger resist

EUV lithography patterning using multi-trigger resist

Three-dimensional modeling of EUV photoresist using the multivariate Poisson propagation model

EUV lithography patterning using multi-trigger resist

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