Modeling of laser reflectance evolution during metalorganic vapor phase epitaxy growth of GaN using SiN treatment

Magnesium diffusion profile in GaN grown by MOVPE

“…The nucleation was done using the socalled ''Si/N-treatment'' procedure. The optimum growth conditions and the details of the Si/N-treatment growth process were reported elsewhere [6][7][8][9][10][11]. TMG, ammonia, silane and Cp 2 Mg were used as Ga, N, Si and Mg precursors with a mixture of H 2 and N 2 as the carrier gas.…”

Investigations of in situ reflectance of GaN layers grown by MOVPE on GaAs (0 0 1)

“…Their potential as a nondestructive, real-time monitoring tool present a considerable support to be used during the growth process. Among these tools, lasers reflectometry is the most successfully used in MOVPE, due to its easy installation [41,42]. This technique gives information's on both growth rate and surface roughness during growth [43][44][45][46].…”

Monitoring texture formation during diamond growth by specular and diffuse reflectance interferometry

“…The Laser Reflectance Interferometry (LRI) method is often used to follow etch/growth rate and optical constants of different materials [12][13][14][15][16]. It is particularly well-suited for diamond synthesis because of the low absorption of diamond in visible range [6,[17][18][19][20][21].…”