Modeling of Inner Fringing Charges and Short Channel Effects in Negative Capacitance MFIS Transistor

Compact Modeling of Surface Potential, Drain Current and Terminal Charges in Negative Capacitance Nanosheet FET including Quasi-Ballistic Transport

“…Now, the short channel effects (SCE) arising due to the fringing electric field in NCFET such as negative DIBL (N -DIBL ), V t -roll up and the sub-threshold slope improvement with a reduction in channel length [8], [9], [10] are captured using the capacitive network approach which we earlier developed for the double gate NCFET [8]. The model for confinement effect is essential for the sub-7nm technology node which we have incorporated in our compact model using same set of equations which are available in BSIM-CMG code [19].…”

“…6(c). However, the conventional SCEs start to dominate at very short channel lengths [8]. We have modeled these conventional SCEs using the same set equations which are available in the BSIM-CMG [19] Fig.…”

“…Therefore, we need to model this accurately at such advanced technology node. To obtain these fringing charges, we use the capacitive network approach [8]. We have validated the terminal charges with the TCAD results as shown in Fig.…”

“…Moreover, the recent discovery of negative capacitance effect originating from the ferroelectric layer present in the gate stack of NCFET can further augment the subthreshold integrity and even provide a larger ON state current than the conventional FETs [4]- [7]. The fringing field effect in a short channel NCFET has been found to significantly lower the steady-state leakage of the device, which can help in continuing Dennard's scaling for the CMOS devices i.e., increasing the frequency of the processor with every new technology node [8]- [10]. Thus, ferroelectric NC based gate all around FET is expected to be a suitable candidate for futuristic ultra-scaled channel devices.…”

“…We include the drift diffusive as well as ballistic transport in our model, which is inevitable at such small dimensions [11]. In addition to our previous work [12], we develop a terminal charge model in this paper using the core model and inner fringing charge model, which is based on the capacitive network approach [8].…”