Modeling of Hybrid Mos for the Implementation of Switched Capacitor Filter Using Single Electron Transistor

Abstract

In digital integrated circuit architectures, transistors serve as circuit switches to charge and discharge capacitors to the required logic voltage levels. A transistor is a three terminal semiconductor device used to amplify and switch electronic signals and electrical power. It has been observed that the Scaling down of electronic device sizes has been the fundamental strategy for improving the performance of ultra-large-scale integrated circuits (ULSIs). Metaloxide-semiconductor field-effect transistors (MOSFETs) have been the most prevalent electron devices for ULSI applications. A better device will be formed with the help of new technology, with high operating speed low and power consumption, which can be the future of electronics industry. A methodology for the electric simulation of MOS/SET hybrid circuits will be developed. As a result of this, a functional model for the single-electron transistor will obtain and Implement Switched Capacitor Filter with the help of designed hybrid MOS. The SET model can be easily coded in any hardware description language.

Transfer Characteristics Analysis of Single Electron Transistor

“…The result of quantum mechanical effect is included in FGR analysis in the calculation, in which the tunneling rates are calculated because of the free energy change, these levels are, integrated into both combinations, namely, source dot, and dot drain junctions. The effect of corresponding circuit parameters is examine for electrical characteristics are calculated by that method (25,26,27).…”