Transfer Characteristics Analysis of Single Electron Transistor

Abstract

Single Electron Transistor is often referred to as a nanometer scale because it can be made very small and can detect the movement of individual electrons. However, the SET has a high input impedance, low voltage gain, and is sensitive to random background charges. The Transfer characteristics features of a SET are calculated by analyzing the different resistance of the tunnels and the tunneling capacitance. Tunneling method is considering a stochastic process, and the state master equation is solving to calculate the free energy change. There are some unusual variations that set the limit for parallel circuit parameters for proper operation. The SET can maintain its scalability and control the movement of individual electrons. In this paper, we have provided a comparative and simulated study of standard CMOS device, SET and hybrid circuits such as a switched capacitor filter.