Modeling of Ge segregation in the limits of zero and infinite surface diffusion

Godbey, D. J.; Ancona, M. G.

doi:10.1116/1.580790

Cited by 35 publications

(30 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The kinetics involved in the incorporation of Bi in GaAs are very similar to previous studies and models of other segregating species, for example, Ge in SiGe [127,128], dopants in Si [129], and both cation [130,131] and anion [132] exchange in III-Vs. Importantly, the existence of a window for smooth, droplet-free GaAsBi growth provides a guide for the growth of different compositions.…”

Section: Dilute Bismidessupporting

confidence: 78%

Principles of Molecular Beam Epitaxy

Ptak

2015

Handbook of Crystal Growth

View full text Add to dashboard Cite

Section: Dilute Bismidessupporting

confidence: 78%

Principles of Molecular Beam Epitaxy

Ptak

2015

Handbook of Crystal Growth

View full text Add to dashboard Cite

“…3. The kinetics involved in the incorporation of Bi in GaAs are very similar to previous studies and models of other segregating species, for example Ge in SiGe [13,14], dopants in Si [15], and both cation [16,17] and anion [18] exchange in III-Vs. Importantly, the existence of a window for smooth, droplet-free GaAsBi growth provides a guide for the growth of different compositions.…”

Section: Resultsmentioning

confidence: 55%

Kinetically limited growth of GaAsBi by molecular-beam epitaxy

Ptak

France

Beaton

et al. 2012

Journal of Crystal Growth

105

View full text Add to dashboard Cite

“…We use the model described in Ref. to simulate the as‐grown Ge profile, which is affected by Ge segregation. The modifications of this profile due to Ge diffusion during thermal treatment are calculated for a series of diffusion lengths L D in the range between 0 and 15 ML assuming a Ge diffusion coefficient independent of the local Ge concentration.…”

Section: Evolution Of Structural and Optical Propertiesmentioning

confidence: 99%

Evolution of thermal, structural, and optical properties of SiGe superlattices upon thermal treatment

Chen

Etzelstorfer

Hackl

et al. 2015

Physica Status Solidi (a)

View full text Add to dashboard Cite

We investigate the evolution of the cross‐plane thermal conductivity κ of a SiGe superlattice (SL) as it is gradually converted into an alloy via post‐growth thermal treatment at temperatures varying from 650 to 1000 °C. X‐ray diffraction (XRD), transmission electron microscopy (TEM), secondary‐ion‐mass‐spectroscopy (SIMS), and photoluminescence (PL) spectroscopy measurements are used as complementary tools to gain insight into the structural properties of our SL and their evolution upon annealing. While the SL structure is preserved up to temperatures of ∼850 °C, full alloying is observed for higher temperatures. The thermal conductivity data, collected with differential 3ω method, show a monotonic increase of κ from ∼4.5 W/m K up to the values expected for a thin‐film alloy. To understand the results, we compute the phonon mean‐free‐path (MFP) spectra using the experimentally determined composition profiles as input. The calculated thermal conductivity values are in good agreement with the experimental data and show that the increase of thermal conductivity is due to a gradual increase of MFP of low‐to‐mid‐frequency phonons, i.e., to a weakening of interface scattering for alloyed SLs. The calculations also allow us to address finite‐thickness effects on the measured thermal conductivity data. Although the used SL had a total thickness of only ∼250 nm, its thermal conductivity can be assumed to coincide with that of a “bulk” (infinitely thick) SL prior to annealing. As interdiffusion increases, boundary scattering at the film/substrate interface becomes relevant and leads to a slow increase of κ. Besides its fundamental relevance, this work shows that the thermal stability of superlattices is limited, and that sizeable structural changes (including defect formation) occur already at operation temperatures of ∼650 °C.

show abstract

Modeling of Ge segregation in the limits of zero and infinite surface diffusion

Cited by 35 publications

References 0 publications

Principles of Molecular Beam Epitaxy

Principles of Molecular Beam Epitaxy

Kinetically limited growth of GaAsBi by molecular-beam epitaxy

Evolution of thermal, structural, and optical properties of SiGe superlattices upon thermal treatment

Contact Info

Product

Resources

About