Handbook of Crystal Growth 2015
DOI: 10.1016/b978-0-444-63304-0.00004-4
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Principles of Molecular Beam Epitaxy

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Cited by 7 publications
(11 citation statements)
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“…An indepth discussion of epitaxial film deposition is beyond the scope of this review and the readers are referred to refs. [76][77][78][79][80][81][82][83].…”
Section: Synthesis Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…An indepth discussion of epitaxial film deposition is beyond the scope of this review and the readers are referred to refs. [76][77][78][79][80][81][82][83].…”
Section: Synthesis Methodsmentioning
confidence: 99%
“…The atoms for deposition are usually produced from thermally evaporated elemental target materials. An oxygen plasma can be used to prepare oxide films by physical reactions with the substrate [78,80].…”
Section: Synthesis Methodsmentioning
confidence: 99%
“…The growth and cathode grid line patterning of the TPV active layers, achieved by MBE and photolithography [211,212]. Reprinted from [211], Copyright © 2015 Elsevier 8. V. All rights reserved.…”
Section: Research On Pv Cells With Narrow Bandgapmentioning
confidence: 99%
“…This has historically provided low growth rates but afforded excellent control over junction formation, doping profiles, and buffer grading between III–V’s. , As a result, MOVPE semiconductor growth costs are high not only due to the expense and low utilization of its toxic and pyrophoric precursors but also due to the slow growth leading to large contributions of safety infrastructure, reactor depreciation, maintenance, and labor costs per layer . The same level of materials control has been demonstrated in molecular beam epitaxy (MBE), but production costs for this technique are even higher due to lower growth rates and limits on scalability imposed by high-vacuum growth environments. , …”
mentioning
confidence: 99%
“…4,33 As a result, MOVPE semiconductor growth costs are high not only due to the expense and low utilization of its toxic and pyrophoric precursors but also due to the slow growth leading to large contributions of safety infrastructure, 34 reactor depreciation, maintenance, and labor costs per layer. 4 The same level of materials control has been demonstrated in molecular beam epitaxy (MBE), 35 but production costs for this technique are even higher due to lower growth rates and limits on scalability imposed by high-vacuum growth environments. 33,36 Recent economic analysis shows that III−V solar cells produced by MOVPE cannot become cost-competitive for nonconcentrator applications without a radical change in approach; 2,4 techniques that are inherently less expensive while providing the same material quality for high-efficiency devices are required.…”
mentioning
confidence: 99%