Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications

The trench-type IGBT is one of the major devices developed for very high-voltage applications, and has been widely used for the motor control of EVs as well as for power-supply systems. In the reported investigation, the accurate prediction of the power dissipation of IGBT circuits has been analyzed. The main focus is given on the carrier dynamics within the IGBTs during the switching-off phase. It is demonstrated that discharging and charging at the IGBT's gate-bottom-overlap region, where electron discharging is followed by hole charging, has an important influence on the switching performance. In particular, the comparison of long-base and short-base IGBTs reveals, that a quicker formation of the neutral region within the resistive base region, as occurring in the long-base IGBT, leads to lower gatebottom-overlap capacitance, thus realizing faster electron discharging and hole charging of this overlap region.

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Compact Modeling of IGBT Charging/Discharging for Accurate Switching Prediction

Miyaoku

Tone

Matsuura

et al. 2020

IEEE J. Electron Devices Soc.

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HiSIM_GaN: Compact Model for GaN-HEMT With Accurate Dynamic Current-Collapse Reproduction

Okada

Mizoguchi

Tanimoto

et al. 2019

IEEE Trans. Electron Devices

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Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications

Cited by 2 publications

References 37 publications

Compact Modeling of IGBT Charging/Discharging for Accurate Switching Prediction

Compact Modeling of IGBT Charging/Discharging for Accurate Switching Prediction

HiSIM_GaN: Compact Model for GaN-HEMT With Accurate Dynamic Current-Collapse Reproduction

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