HiSIM_GaN: Compact Model for GaN-HEMT With Accurate Dynamic Current-Collapse Reproduction

Okada, Yasuhiro; Mizoguchi, T.; Tanimoto, Yuta; Kikuchihara, Hideyuki; Naka, Toshiyuki; Saito, Wataru; Miura-Mattausch, Mitiko; Mattausch, H. J.

doi:10.1109/ted.2018.2868284

Cited by 8 publications

(1 citation statement)

References 45 publications

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“…These models contain the behavior models [7]- [9], table-based models [10], [11] and compact models. The compact models usually contain the empirical models [12]- [15] and physics-based models [16]- [23]. However, the output characteristic inconsistencies between the modeled-and measured-data due to the charge trapping effect imply that the sub-networks used for charge trapping effect still need to be investigated.…”

Section: Introductionmentioning

confidence: 99%

A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs

et al. 2019

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In this paper, a threshold voltage model for charge trapping effect of AlGaN/GaN HEMTs is proposed. The quiescent bias stresses are considered for well modeling the current collapse critical points in pulsed I-V curves. Moreover, the low-frequency dispersions due to the charge trapping effect are well disposed by using the proposed model, which are validated by the scattering parameters (S-parameters). Also, a trapping related parameter α is proposed in the model, which can be conveniently used to describe the current collapse critical points offset due to the different acceptor energy levels of the dopants in GaN buffer. Different from our previous threshold voltage model, the proposed model in this paper can accurately model the dynamic threshold voltage shift due to the fast capture and slow emission processes. The verifications are carried out by comparing with the transient measured drain current. The proposed model is also implemented into a large-signal model for further verifications. The improved large-signal model with the threshold voltage shift model is verified by 0.25 µm process AlGaN/GaN HEMTs with pulsed I-V, S-parameters, power sweep and load-pull measurements. More accurate agreements between measured and modeled results have been achieved in terms of output power (Pout), gain, and power added efficiency (PAE).

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Section: Introductionmentioning

confidence: 99%

A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs

et al. 2019

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Physics‐based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper)

Mao,

Su,

et al. 2024

Int J Numerical Modelling

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The compact model plays a pivotal role as a critical link between device fabrication and circuit design. While conventional compact model theories and techniques are generally mature, the intricate physical mechanisms of gallium nitride (GaN) high‐electron mobility transistors (HEMTs) pose challenges due to their strong non‐linearity in high‐power radio frequency (RF) applications. This complexity hinders achieving the required precision for applications using traditional modeling methods. Therefore, the development of physics‐based compact modeling techniques becomes crucial for a deeper understanding of the intricate features of GaN HEMTs. This paper explores the advancements and the current state‐of‐the‐art in physics‐based compact models. The comprehensive review covers both intrinsic core models and real‐device effects models. Core models are presented with a focus on fundamental concepts, development overviews, and applications. Additionally, the real‐device effects models are introduced, encompassing advanced characterization techniques and modeling methodologies. Furthermore, the paper outlines future trends in physics‐based compact modeling, providing valuable insights for individuals engaged in transistor compact modeling work.

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On large-signal modeling of GaN HEMTs: past, development and future

Luo

Guo

2023

Chip

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HiSIM_GaN: Compact Model for GaN-HEMT With Accurate Dynamic Current-Collapse Reproduction

Cited by 8 publications

References 45 publications

A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs

A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs

Physics‐based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper)

On large-signal modeling of GaN HEMTs: past, development and future

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