Modeling of extrinsic parasitic elements of Si based GaN HEMTs using two step de-embedding structures

Essaadali, Riadh; Kouki, Ammar B.; Jarndal, Anwar; Ghannouchi, Fadhel M.

doi:10.1109/wamicon.2015.7120399

Cited by 3 publications

(3 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…PSO is a computational optimization technique that solves a problem by iteratively enhances candidate solutions for a given measured value. 29 The problem is resolved by finding a set of candidate solutions named "Particles" and moving them in the search space based on a simple mathematical equation. 31 GWO is a recently developed meta-heuristic optimization technique, which mocks the grey wolves' leadership hierarchy and their hunting intellect.…”

Section: The Proposed Pso-gwo Techniquementioning

confidence: 99%

“…The boundaries of resistors and capacitors for all models have been estimated as per the procedure explained in Reference 29. The procedure followed insures having reliable and physical relevant boundaries for the resistors and capacitors values, thus, resulting in better fitting for open structure's Y ‐parameters.…”

Section: Equivalent Circuit Modelsmentioning

confidence: 99%

“…PSO is a computational optimization technique that solves a problem by iteratively enhances candidate solutions for a given measured value 29 . The problem is resolved by finding a set of candidate solutions named “Particles” and moving them in the search space based on a simple mathematical equation 31 .…”

Section: Extrinsic Rc‐circuit Parameters Extractionmentioning

confidence: 99%

See 2 more Smart Citations

Hybrid particle swarm optimization‐grey wolf optimization basedsmall‐signalmodeling applied toGaNdevices

Abushawish

Jarndal

2022

Int J RF Mic Comp-Aid Eng

Self Cite

View full text Add to dashboard Cite

In this research, four different equivalent circuit models that characterize the substrate/buffer loading effect for GaN high electron mobility transistor (HEMT) on Si substrate have been investigated. Y‐parameter measurements of an open de‐embedded structure have been used to characterize this effect in GaN HEMT on Si. An optimization technique based on hybridization between two meta‐heuristic techniques, which are particle swarm optimization (PSO) and grey wolf optimization (GWO) has been developed to extract physical relevant model elements. The proposed optimization technique is applied on GaN HEMTs of different sizes and validated by means of S‐parameters fitting. In addition, the extracted elements are evaluated in terms of their reliability and scalability. The proposed PSO‐GWO technique shows a very good agreement with previous research results. It has been found that the circuit topology of both resistive and capacitive shunt branches is more accurate in characterizing conductive and displacement substrate/buffer leakage current, respectively. The results of this research validate the applicability of the proposed technique and the model topology for small and large‐signal modeling of GaN transistors on Silicon substrate.

show abstract

Section: The Proposed Pso-gwo Techniquementioning

confidence: 99%

Section: Equivalent Circuit Modelsmentioning

confidence: 99%

Section: Extrinsic Rc‐circuit Parameters Extractionmentioning

confidence: 99%

See 1 more Smart Citation