A New GaN HEMT Equivalent Circuit Modeling Technique Based on X-Parameters

Essaadali, Riadh; Jarndal, Anwar; Kouki, Ammar B.; Ghannouchi, Fadhel M.

doi:10.1109/tmtt.2016.2594234

Cited by 29 publications

(35 citation statements)

References 36 publications

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“…The yellow ones relate harmonics with subscripts with the same sign in the input and output spectra. They are usually called Y S in the bibliography [5], [6] through the analogy with the X-parameter subsets. The blue ones relate harmonics with subscripts with different signs and are usually called Y T .…”

Section: (9)mentioning

confidence: 99%

“…Taking into account the relationship between currents and voltages and incident and scattered waves [5], [6] it is straightforward to demonstrate that:…”

Section: Obtaining X Parameters From the Admittance Y Matrixmentioning

confidence: 99%

“…The application of this formulation to an actual device would require the proper de-embedding [4], [6] of the parasitic shell in order to reach the intrinsic plane in which the quasi-static approach could be valid.…”

mentioning

confidence: 99%

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Poly-harmonic distortion model extraction in charge-controlled one-port devices

Martín-Guerrero

Entrambasaguas

Camacho‐Peñalosa

2017

2017 12th European Microwave Integrated Circuits Conference (EuMIC)

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Abstract-A charge-controlled, one-port device is used to describe and discuss the extraction procedure of a Poly-Harmonic Distortion (PHD) model in detail. For this case, both voltage and current waveforms are shown to be enough to fully characterize the PHD model. It is also shown that all the information specifically required for this PHD model definition can be stored in the Fourier coefficients of the incremental conductance and capacitance. The results are validated by comparing them with those obtained using a commercial circuit simulation tool.

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Section: (9)mentioning

confidence: 99%

“…Taking into account the relationship between currents and voltages and incident and scattered waves [5], [6] it is straightforward to demonstrate that:…”

Section: Obtaining X Parameters From the Admittance Y Matrixmentioning

confidence: 99%

See 1 more Smart Citation

Poly-harmonic distortion model extraction in charge-controlled one-port devices

Martín-Guerrero

Entrambasaguas

Camacho‐Peñalosa

2017

2017 12th European Microwave Integrated Circuits Conference (EuMIC)

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“…As the SSEC model connects the physical device structure to its circuit analysis, it enables study of the microwave and RF performance with device geometrical parameters. In this case, different procedures have been proposed to extract the SSEC parameters of microwave heterostructure devices from S‐parameters. During working with S‐parameters at higher frequencies require accurate transistor models up to micro/millimeter‐wave frequencies.…”

Section: Introductionmentioning

confidence: 99%

Microwave frequency small-signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT

Amarnath

Panda

Lenka

2017

Int J RF Microw Comput Aided Eng

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This article presents an accurate and efficient extraction procedure for microwave frequency small‐signal equivalent circuit parameters of AlInN/GaN metal‐oxide‐semiconductor high electron mobility transistor (MOSHEMT). The parameter extraction technique is based on the combination of conventional and optimization methods using the computer‐aided modeling approach. The S‐, Y‐, and Z‐ parameters of the model are extracted from extensive dynamic AC simulation of the proposed device. From the extracted Y‐ and Z‐ parameters the pad capacitances, parasitic inductances and resistances are extracted by operating the device at low and high frequency pinch‐off condition depending upon requirement. Then, the intrinsic elements are extracted quasi analytically by de‐embedding the extrinsic parameters. S‐parameter simulation of the developed small‐signal equivalent circuit model is carried out and is compared with TCAD device simulation results to validate the model. The gradient based optimization approach is used to optimize the small‐signal parameters to minimize the error between developed SSEC model and device simulation based s‐parameters. The microwave characteristics of optimized SSEC model is carried out (fT = 169 GHz and fmax = 182 GHz) and compared with experimental data available from literature to validate the model.

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“…Accordingly, many researchers pay more attention on the characteristics of devices made from GaN process. So far, much advancement has been made about active devices, not only in effects like drain current instability [3] and effect of fringing capacitance [4] but also in modeling like the equivalent model of GaN HEMT [5,6]. However, the lack of modeling of passive devices, especially transmission lines, caused much trouble in actual circuit simulation, reflecting in the difference between pre-simulation and post-simulation.…”

Section: Introductionmentioning

confidence: 99%

A Scalable Equivalent Circuit Model for Gan On-Chip Transmission Lines

Zhang¹,

He²,

Wang³

et al. 2017

Proceedings of the International Conference on Computer Networks and Communication Technology (CNCT 2016)

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Abstract. This paper presents a scalable equivalent circuit model of GaN on-chip transmission lines. The equivalent circuit model is derived and verified to characterize the frequency-dependent parameters at a range of DC to 40 GHz accurately. Characteristic function approach is utilized to extract all the model parameters properly. The model is validated to be well-fitted and scalable by comparing the theoretical model simulation and electromagnetic simulation in the form of scatter parameter.

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A New GaN HEMT Equivalent Circuit Modeling Technique Based on X-Parameters

Cited by 29 publications

References 36 publications

Poly-harmonic distortion model extraction in charge-controlled one-port devices

Poly-harmonic distortion model extraction in charge-controlled one-port devices

Microwave frequency small-signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT

A Scalable Equivalent Circuit Model for Gan On-Chip Transmission Lines

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