2007
DOI: 10.1002/mop.22903
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Modeling of dielectric charging in RF MEMS capacitive switches

Abstract: : A unified, macroscopic, one-dimensional

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Cited by 21 publications
(15 citation statements)
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“…This charge injection process is very similar with that of charge accumulation in the regions with discontinuous electrical parameter. Thus, the charge injection process can be described by the analysis of multilayer Maxwell capacitor configuration, and the transient growth of charge injection process can be expressed as [20] …”
Section: Resultsmentioning
confidence: 99%
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“…This charge injection process is very similar with that of charge accumulation in the regions with discontinuous electrical parameter. Thus, the charge injection process can be described by the analysis of multilayer Maxwell capacitor configuration, and the transient growth of charge injection process can be expressed as [20] …”
Section: Resultsmentioning
confidence: 99%
“…3) Total Capacitance: Combining (5)- (7) and (17)- (20), the relationship between the contact ratio and the voltage stress is shown in Fig. 8(a).…”
Section: ) Capacitance In Contact Areamentioning
confidence: 98%
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“…The surface roughness of the metal bridge and dielectric film affect directly the dielectric charging since charges are injected through the contacting areas. The effect of dielectric charging through surface roughness and asperities has been reported in several papers (Cabuz 1999, van Spengen 2002, Sumant 2007, Papaioannou 2007d. Moreover charges are injected through micro gap discharge (Torres 1999, Slade 2002, Hourdakis 2006 in the proximity areas due to deviation from Pasken law and the charging is induced due to high electric field (Papaioannou 2006b) in areas where no one of the previous mechanisms can occur.…”
Section: Effect Of Contact Roughnessmentioning
confidence: 91%
“…For devices that demand structures with relatively stiffer mechanical parts, this creates a problem because it becomes increasingly difficult to obtain the same displacement using voltages that lie within the CMOS operating regime. Moreover, the use of large voltages reduces device lifetime due to unwanted side-effects like dielectric charging [5].…”
Section: Motivationmentioning
confidence: 99%