Effect of Environmental Humidity on Dielectric Charging Effect in RF MEMS Capacitive Switches Based on $C$– $V$ Properties

Wang, Lifeng; Tang, Jieying; Huang, Qing‐An

doi:10.1109/jmems.2012.2237384

Cited by 20 publications

(8 citation statements)

References 21 publications

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“…Such instances can be minimized by preventing water vapor from entering the package. 20 These undesired effects emphasize the importance of using hermetic packages for packaging ohmic contact RF MEMS switches. 21 3 Packaging Architecture Three important aspects considered for the packaging architecture of the bare switch are as follows.…”

Section: Description Of the Rf Mems Switchmentioning

confidence: 99%

Planar architecture for microstrip interfaced packaging of coplanar-waveguide-based radio frequency microelectromechanical system switches

Singh

Giridhar

Rao

et al. 2015

J. Micro/Nanolith. MEMS MOEMS

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This paper describes the architecture of microstrip (MS) interfaced packaging of a coplanar-waveguide (CPW)-based radio frequency microelectromechanical systems (RF MEMS) switch in a hermetic metalceramic RF package. The switch is integrated along with CPW to MS (CPW-MS) transitions within the package itself. This makes the MS interfaced packaged switch module readily mountable on MS based RF boards and subsystems. The CPW-MS transition for the package was designed as a separate off-chip entity on an alumina substrate and utilizes via hole. The integrated three-dimensional model of the package consisting of the RF MEMS switch and the transitions was simulated using high frequency structure simulator. The realized module shows an insertion loss of 0.2 and 1.1 dB at 100 MHz and 7 GHz, respectively. The measured isolation is better than 60 dB at 100 MHz and 30 dB at 7 GHz. The return loss is better than 15 dB up to 7 GHz. The estimated packaging and transitioning loss is 0.5 dB at 5 GHz. This packaging architecture is a planar solution for the MS interfaced packaging of CPW based RF MEMS switches for designers who do not have access to high-end technologies, such as zero-level packaging, through silicon via or low temperature co-fired ceramics. © 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)1 Introduction Radio frequency microelectromechanical systems (RF MEMS) switches exhibit unprecedented low insertion loss and wideband performance. These switches are generally realized in a shunt or series configuration using microstrip (MS) line or coplanar waveguide (CPW) transmission lines. 1 Designers prefer CPW-based RF MEMS switches over MS ones as CPW transmission lines incorporate the availability of an adjacent ground path along with the signal line and support a higher frequency of operation. 1 On the other hand, realization of the majority of planar RF individual modules and their integration is carried out in MS transmission line technology. This is because of the inherent advantages of MS transmission lines, such as ease of interconnects, adjustments, compact size, ease of fabrication, and low cost. 2-6 Due to the different modes of electromagnetic signal propagation, CPWbased RF modules cannot be directly integrated to MS based RF modules. Likewise, CPW-based RF MEMS switches cannot be readily integrated on MS based RF boards or subsystems. A CPW to MS (CPW-MS) transition would be required at both ends of the CPW RF MEMS switch for the integration. 5,6 Reference 7 discusses a frequency tunable MS patch antenna using CPW based RF MEMS capacitors wherein CPW-MS transitions have been utilized.The published datasheets and references of commercially available surface mountable packaged RF MEMS switches, such as Omron and DelfMEMS, show CPW input-output RF

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Section: Description Of the Rf Mems Switchmentioning

confidence: 99%

Planar architecture for microstrip interfaced packaging of coplanar-waveguide-based radio frequency microelectromechanical system switches

Singh

Giridhar

Rao

et al. 2015

J. Micro/Nanolith. MEMS MOEMS

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“…Different controls like proportional-integralderivative (PID) and fuzzy systems are used for controlling these parameters because of the complexity and nonlinearity [30]- [32]. In critical processes such as in MEMS, careful monitoring of the temperature, humidity, and sanity or cleanliness of the room by particle count is vital [33], [34].…”

Section: Introductionmentioning

confidence: 99%

Automated data monitoring of MEMS cleanroom parametric requirements

Capanang

Panganiban²,

Ortiz³

et al. 2021

IJEECS

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<p>Cleanroom parameters such as temperature, relative humidity and particle count are vital in maintaining cleanliness. People and machines working inside the cleanroom are main contributors for the sudden changes of the separameters. Measurements and monitoring of these parameters are therefore necessary to reduce rejects and downtime in the production of micro-electro-mechanical systems (MEMS). This paper presents a method of developmentof an automated data monitoring of MEMS cleanroom parametric requirements. The prototype developed uses DHT11 sensor and Sharp dust sensor for measuring the temperature, humidity and particle count respectively which are displayed in an LCD display. These parameters are recorded through a data logger for analysis and control. Additionally, agraphical user interface was also developed using visual studio for the working personnel and for supervisory monitoring and control. As a result, the possible quality compromise in the production of MEMS is detected when the monitored parameters are beyond the range.</p>

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“…They are susceptible to plastic deformation and low power handing, which may be the two biggest problems of such thin metallic bridges [5][6][7]. For capacitive switches, the dielectric charging phenomenon still cannot be completely solved at present [8,9].…”

Section: Introductionmentioning

confidence: 99%

Laterally-actuated inside-driven RF MEMS switches fabricated by a SOG process

Wang¹,

Han²,

Tang³

et al. 2015

J. Micromech. Microeng.

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This paper presents two RF MEMS switches, both of them are laterally-actuated and inside-driven. One is the push–pull type switch controlled by only one actuation signal, and the other is the low voltage three-state switch actuated by rhombic structures. To fabricate RF MEMS switches, the silicon on glass (SOG) based microwave transmission line is redesigned, and an electroplated gold layer is added to the standard SOG process flow. The measured insertion loss and isolation of the push–pull type switch at 6 GHz are −0.28 dB and −38.4 dB, respectively, and its measured pull-in voltage is 57 V. The measured insertion loss and isolation of the low voltage three-state switch at 6 GHz are −0.77 dB and −53 dB, respectively, and the measured pull-in voltage is only 15 V. Preliminary lifetime tests show the lifetimes of both switches exceed the magnitude of 107 cycles.

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Effect of Environmental Humidity on Dielectric Charging Effect in RF MEMS Capacitive Switches Based on $C$– $V$ Properties

Cited by 20 publications

References 21 publications

Planar architecture for microstrip interfaced packaging of coplanar-waveguide-based radio frequency microelectromechanical system switches

Planar architecture for microstrip interfaced packaging of coplanar-waveguide-based radio frequency microelectromechanical system switches

Automated data monitoring of MEMS cleanroom parametric requirements

Laterally-actuated inside-driven RF MEMS switches fabricated by a SOG process

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