Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment

Hössinger, Andreas; Djurić, Z.; Babayan, A. Z.

doi:10.1007/978-3-211-72861-1_13

Cited by 2 publications

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“…The function ( ) f E describes the energy distribution of particles, which can be obtained from plasma sheath calculations (10). The energy dependence in [1] is only taken into account for ions, since their energy has an impact on the sputter yield.…”

Section: ( )mentioning

confidence: 99%

“…The transport equations of more generalized models can not be solved in three dimensions by common surface integration techniques due to computational limitations. For simplification specular reflections of ions or higher order re-emissions of neutrals are often not fully incorporated (1,2). A more promising approach is based on the Monte Carlo method.…”

Section: Introductionmentioning

confidence: 99%

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Three-Dimensional Plasma Etching Simulation using Advanced Ray Tracing and Level Set Techniques

Ertl

Selberherr

2009

ECS Trans.

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We present three-dimensional simulation techniques for plasma etching processes. Models based on Langmuir-type adsorption and on ballistic particle transport at feature scale can be efficiently solved in three dimensions. Surface coverages are self-consistently calculated. The local sputter rates of ions and the fluxes of neutrals are computed using modern ray tracing algorithms. In this way angle and energy dependent sputter yields or specular reflections of ions can be incorporated in a natural manner. For the time evolution of the surface we apply a recently developed fast multilevel-set framework. Our simulation techniques are demonstrated using a SF 6 /O 2 plasma etching process model.

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Section: ( )mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%