Modeling of amorphous-silicon thin-film transistors for circuit simulations with SPICE

Khakzar, K.; Lüeder, E.

doi:10.1109/16.137323

Cited by 60 publications

(21 citation statements)

References 6 publications

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“…In general, the trapping and the de-trapping time constants need not be equal. Incorporating the effect of drain source bias in the linear region of TFT operation [10], (5) is modified to (6). This is the final equation which is used in the simulator.…”

Section: Recursive Model Of Vt Shift and Integration With Aim-spicementioning

confidence: 99%

“…The amorphous TFT has been modeled and integrated into Level 11 and Level 15 of AIM-Spice to aid circuit design [6]- [8] However, these models do not yet account for the integration of the effects of charge trapping in the TFT, particularly the V T shift. Since the amorphous silicon TFT models (Level 11 and level 15) of AIM-Spice are copyright protected, the open-source BSIM4V4 model has been used for the purpose of demonstration.…”

Section: B Integration With Aim-spicementioning

confidence: 99%

“…But the main factor that has been limiting the use of TFTs in these application specific circuits is the V T shift (and thus the drain current I D and other DC parameters shift) with time on continuous time operation. Conventional TFT simulators in the literature have not addressed this aspect of V T shift which becomes an important point in circuit design [6]- [8]. This paper presents a novel circuit simulator which uses the recursive modeling of V T to predict the circuit characteristics in transient or AC analysis when such TFTs are used.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Large area flexible electronics for analog mode continuous time applications

Raghuraman

Sambandan

Yadav

2015

2015 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)

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Conventionally, the applications of non-crystalline semiconductor based Thin Film Transistors (TFTs) are confined to large area display applications. Typically they are used in the driver circuits of pixel arrays. One of the fundamental characteristics of such TFTs is the drift in the threshold voltage V T on application of gate bias. This paper presents a novel circuit simulator based on the recursive model of V T shift and shows how the simulator can be used to explore novel analog mode continuous time applications of TFTs based on sensor actuator architectures. While operating in analog mode, V T shift causes the DC operating point of the circuit to vary. Using this circuit simulator, the concept of employing negative feedback to minimize the drain current variation in circuits made of TFTs is studied. The ideas are validated by fabricating p-type Copper phthalocyanine (CuPC) TFTs and testing the circuits.

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Section: Recursive Model Of Vt Shift and Integration With Aim-spicementioning

confidence: 99%

Section: B Integration With Aim-spicementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Large area flexible electronics for analog mode continuous time applications

Raghuraman

Sambandan

Yadav

2015

2015 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)

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“…The inorganic semiconductor and organic semiconductor TFT has been well modeled and integrated into AIM-Spice (level 11 and level 15) and other simulators [5]- [10].…”

Section: Introductionmentioning

confidence: 99%

AIM-Spice Integration of a Recursive Model for Threshold Voltage Shift in Thin Film Transistors

Raghuraman

Sambandan

2014

J. Display Technol.

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Non-crystalline semiconductor based thin film transistors are the building blocks of large area electronic systems. These devices experience a threshold voltage shift with time due to prolonged gate bias stress. In this paper we integrate a recursive model for threshold voltage shift with the open source BSIM4V4 model of AIM-Spice. This creates a tool for circuit simulation for TFTs. We demonstrate the integrity of the model using several test cases including display driver circuits.

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“…In this direction, [13] presents a SPICE based model for static and dynamic performance for amorphous silicon-based thin film transistor. Focusing more on material properties and considering the change in valence and conduction band structure during externally applied stress, [14] terms these changes as an effective change of material itself.…”

Section: Introductionmentioning

confidence: 99%

Device modelling of silicon based high-performance flexible electronics

Gupta

Vilouras

Heidari

et al. 2017

2017 IEEE 26th International Symposium on Industrial Electronics (ISIE)

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Abstract-The area of flexible electronics is rapidly expanding and evolving. With applications requiring high speed and performance, ultra-thin silicon-based electronics has shown its prominence. However, the change in device response upon bending is a major concern. In absence of suitable analytical and design tool friendly model, the behavior under bent condition is hard to predict. This poses challenges to circuit designer working in the bendable electronics field, in laying out a design that can give a precise response in a stressed condition. This paper presents advances in this direction and investigates the effect of compressive and tensile stress on the performance of NMOS and PMOS transistor and a touch sensor comprising a transistor and piezoelectric capacitor.

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Modeling of amorphous-silicon thin-film transistors for circuit simulations with SPICE

Cited by 60 publications

References 6 publications

Large area flexible electronics for analog mode continuous time applications

Large area flexible electronics for analog mode continuous time applications

AIM-Spice Integration of a Recursive Model for Threshold Voltage Shift in Thin Film Transistors

Device modelling of silicon based high-performance flexible electronics

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