Modeling of 1D confinement in FD-SOI trigate nanowires at deep cryogenic temperatures

Catapano, E.; Cassé, M.; Gaillard, F.; Meunier, Tristan; Vinet, M.; Ghibaudo, G.

doi:10.1016/j.sse.2022.108466

Cited by 1 publication

(1 citation statement)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The ballistic current results from a top-the-barrier model. Catapano et al [34] developed a compact model for the 1D Density of States (DoS) and the implications of 1D confinement for the inversion charge and the transconductance concerning temperature. Badami et al [35] have studied the I D -V G properties of a square NWT with a gate length L G of 10 nm and a crosssectional area of 9 nm 2 .…”

Section: Basic Models In Simulations Of Nanowirementioning

confidence: 99%

Analytical Modeling of [001] Orientation in Silicon Trigate Rectangular Nanowire Using a Tight-Binding Model

Paramasivam,

Gowthaman,

Srivastava

2024

Silicon

View full text Add to dashboard Cite

In the realm of electronics, the performance of Silicon Trigate Rectangular Nanowires (Si-TRNW) and the structural characteristics of <001> orientation using tight-binding models have been analyzed. The fast algorithm based on the tight-binding model for Trigate Silicon nanowires yielded a remarkable ION/IOFF ratio of 1.49 × 1010 and leakage current (ILeak or IOFF) of 3.7 × 10−17μA. Furthermore, a maximum conduction band energy level (Ecmax) of −0.003 eV and a Subthreshold Slope (SS) of 120 mV has been obtained for a channel length of 15 nm. At an energy level of 3 eV, a high Transmission coefficient, T(ε), of 4 has been attained using the E-k dispersion method. This analysis also involved the calculation of three ∆ valleys pertinent to the channel’s effectiveness in <001> orientation, with proximity nearer to 1 m0. The Schrodinger-Poisson equation has been analyzed with the Ballistic transport along the [001] z-direction in channel potential. A comparative assessment has been also performed between the lateral dimensions of rectangular nanowires with equal energy levels, utilizing both the tight-binding model and Density Functional Theory (DFT) techniques. In some high-frequency applications, a high transmission coefficient is beneficial to maximize the amount of energy or information that gets transmitted. Reducing leakage current would offer a technological pathway for performance improvement of high-frequency applications. The high ON-current (ION) has been obtained through the DFT approach between source and drain terminals is particularly desirable for applications demanding for fast switching speeds and high-performance computing. The strengths of both methods in hybrid approaches is a common strategy to achieve simulations that are both accurate and efficient. Notably, the nanowires subjected to hydrostatic strain, exhibiting enhanced mobility and exceptional electrostatic integrity, emerged as pivotal components for forthcoming technology nodes. This research augments the potential feasibility of strain-based Si nanowires, even at the 3 nm scale, in subsequent technological advancements.

show abstract

Section: Basic Models In Simulations Of Nanowirementioning

confidence: 99%