Modeling linearity and ambipolarity in GFETs on different dielectrics for communication applications

Sharma, Padma; Singh, Sukhbir; Gupta, Shuchi; Kaur, Inderpreet

doi:10.1007/s10854-017-8218-2

Cited by 10 publications

(4 citation statements)

References 37 publications

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“…where E, H d and L/R are carrier energy, the Hamiltonian of device and the self-energy of L/R electrodes, respectively 40,41 Fig. 2 shows the schematic of proposed GeNR-TFET.…”

Section: Device Structure and Simulation Setupmentioning

confidence: 99%

First Principles Study of the Ambipolarity in a Germanene Nanoribbon Tunneling Field Effect Transistor

Samipour

Dideban

Heidari

2019

ECS J. Solid State Sci. Technol.

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In this article, the effects of hetero-dielectric gate material and gate-drain underlap on the ambipolar and ON-state current of a germanene nanoribbon (GeNR) tunneling field-effect transistors (TFETs) is examined. The simulations are performed using the combination of density functional theory (DFT) and nonequilibrium Green's function (NEGF) formalis m. It was observed that using high-k dielectric gate material increases the ON-state current while the combination of hetero-dielectric gate material and gate-drain underlap suppresses the ambipolar current and improves the ON-state current. In addition, the effect of various hetero-junctions in the source region on the performance of GeNR-TFET was investigated. Due to the dependency between the width and energy bandgap in GeNR, utilizing a small bandgap in the source improves ON-state current and its ambipolar behavior.

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“…where E, H d and L/R are carrier energy, the Hamiltonian of device and the self-energy of L/R electrodes, respectively 40,41 Fig. 2 shows the schematic of proposed GeNR-TFET.…”

Section: Device Structure and Simulation Setupmentioning

confidence: 99%

First Principles Study of the Ambipolarity in a Germanene Nanoribbon Tunneling Field Effect Transistor

Samipour

Dideban

Heidari

2019

ECS J. Solid State Sci. Technol.

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“…Though the non‐linearity effects of GFETs have been reported by several researches [6–9], however, these reports are on zero bandgap graphene. In [6], K. A. Jenkins et al.…”

Section: Introductionmentioning

confidence: 99%

“…A single linearity parameter, third-order intercept point (IP 3 ) is investigated for epitaxial GFET and chemical vapour deposition (CVD) GFET in [6] by conducting the two tone test. Impact of dielectrics on linearity of GFET is proposed in [9], and it is shown that by using high-k HfO 2 (dielectric constant of 25) as gate dielectric improves the linearity in the expense of drastic reduction in mobility and transconductance. A. U. Alam et al [8], observed the RF linearity behaviour of short channel GFETs and concluded that the linearity of GFET is getting affected by the non-linearities that originate from the drain current components.…”

Section: Introductionmentioning

confidence: 99%

Memoryless non‐linearity in B‐Substitution doped and undoped graphene FETs: A comparative investigation

Chandrasekar

Pradhan

2021

IET Circuits, Devices & Systems

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An accurate electrical equivalent circuit model for boron-substitution doped graphene field effect transistor (GFET) is proposed to analyse the effects of memoryless nonlinearity on transconductance. The proposed equivalent circuit model is verified with the simulated results of an industry-standard circuit simulation tool. The fundamental figures of merit (FOMs), such as the second-and third-order harmonic distortion terms (HD 2 and HD 3), gain compression point (A in,1dB), second-and third-order intermodulation distortion terms (IM 2 and IM 3), and second-and third-order input intercept points (A IIP2 and A IIP3) are mathematically modelled for B-substitution doped GFET to examine the linear behaviour of the device. The expressions are validated by performing the single tone and double tone simulation test to the proposed equivalent circuit model using the industry-standard circuit simulator. The proposed model is compatible and predicts accurate results for both B-substitution doped and undoped GFET. The simulation results are having an excellent agreement with the mathematical model, which are also compared with the undoped GFET and conventional MOSFET. It is also observed that by Bsubstitution doping the graphene sheet significantly induces the bandgapt and hence enhances the linear behaviour of the B-substitution doped GFET and promises highly desirable linearity requirement in the analog/RF applications. This is an open access article under the terms of the Creative Commons Attribution-NonCommercial-NoDerivs License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non-commercial and no modifications or adaptations are made.

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“…For a molecular junction with an inorganic electrode, a nitrogen or sulfur anchoring atom is usually used in order to enhance the coupling between the electrode and the central molecule [4]. Alternatively, organic electrodes can also be used, such as metallic carbon nanotubes (CNTs) and graphene nanoribbons (GNRs) [5][6][7][8][9]. Recently two isotropic forms of carbon, namely carbynes and carbon nanotubes (CNTs), have been highlighted in the study of 1D or quasi-1D molecular devices [10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Molecular junction by tunneling in 1D and quasi-1D systems

Moura-Moreira

Ferreira

Liu

et al. 2019

J. Phys.: Condens. Matter

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We have investigated electron tunneling through two one-dimensional (1D) molecular junctions based on first-principles simulations using the density functional theory combined with the non-equilibrium Green’s functions methodology. The first junction, composed of left and right carbyne wire electrodes with a sodium atom in between, is atomically thin. The second one is quasi-one-dimensional (quasi-1D) and consists of two single-wall carbon nanotube electrodes, closed on the tips and again a sodium atom in the scattering region. Although the bridging atom bonds weakly to the electrodes in both systems, it strongly affects the electronic transport properties, such as electron transmission, current–voltage relation, differential conductance, density of states and eigenchannels. This is demonstrated by comparing with the results obtained from the corresponding systems for both the 1D and the quasi-1D junctions in the absence of the central sodium atom. The revealed transport properties are sensitive to the molecular geometry. This helps future molecular electronic device design.

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Modeling linearity and ambipolarity in GFETs on different dielectrics for communication applications

Cited by 10 publications

References 37 publications

First Principles Study of the Ambipolarity in a Germanene Nanoribbon Tunneling Field Effect Transistor

First Principles Study of the Ambipolarity in a Germanene Nanoribbon Tunneling Field Effect Transistor

Memoryless non‐linearity in B‐Substitution doped and undoped graphene FETs: A comparative investigation

Molecular junction by tunneling in 1D and quasi-1D systems

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