Modeling light trapping and electronic transport of waffle-shaped crystalline thin-film Si solar cells

Brendel, Rolf; Scholten, D.

doi:10.1007/s003390050991

Cited by 42 publications

(12 citation statements)

References 2 publications

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“…2 denotes the normal transmittance of specular light through the wafer of thickness W. For every wavelength, the wafer has the absorption coefficient α and refractive index n. Similarly, T d denotes the transmission factor of fully randomized light; see [15] for an analytic expression for T d . The upward and downward light flows shown in Figure 2 define 10 linear equations.…”

Section: Optical Modelmentioning

confidence: 99%

Breakdown of the efficiency gap to 29% based on experimental input data and modeling

Brendel

Dullweber

Peibst

et al. 2015

Progress in Photovoltaics

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We demonstrate a procedure for quantifying efficiency gains that treats resistive, recombinative, and optical losses on an equal footing. For this, we apply our conductive boundary model as implemented in the Quokka cell simulator. The generation profile is calculated with a novel analytical light-trapping model. This model parameterizes the measured reflection spectra and is capable of turning the experimental case gradually into an ideal Lambertian scheme. Simulated and measured short-circuit current densities agree for our 21.2%-efficient screen-printed passivated emitter and rear cell and for our 23.4%-efficient ion-implanted laser-processed interdigitated back-contacted cell. For the loss analysis of these two cells, we set all experimentally accessible control parameters (e.g., saturation current densities, sheet resistances, and carrier lifetimes) one at a time to ideal values. The efficiency gap to the ultimate limit of 29% is thereby fully explained in terms of both individual improvements and their respective synergistic effects. This approach allows comparing loss structures of different types of solar cells, for example, passivated emitter and rear cell and interdigitated back-contacted cells. Copyright

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Section: Optical Modelmentioning

confidence: 99%

Breakdown of the efficiency gap to 29% based on experimental input data and modeling

Brendel

Dullweber

Peibst

et al. 2015

Progress in Photovoltaics

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“…Light is being incident from the front electrode which is a transparent conducting glass plate having high work function. Materials having low work function are used as back electrodes [11][12][13][14]. Generally, indium tin oxide (ITO)-coated glass plate is used as a conducting glass plate.…”

Section: Introductionmentioning

confidence: 99%

Effect of back electrode on photovoltaic properties of crystal-violet-dye-doped solid-state thin film

Haldar

Maity

Manik

2008

Ionics

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Recently, organic/polymeric materials are being widely used to develop photovoltaic devices. In our earlier work, we have studied the photovoltaic property of crystal violet in solid-state photoelectrochemical cell (PEC), but the power conversion efficiency is quite low. In this work, we have used aluminium-coated mylar as a back electrode to enhance the power conversion efficiency. Because of the insertion of a reflecting back electrode, the charge carriers are confined in the active layer which enhances the efficiency from 0.144% to 0.670%. Thin film polymer PEC has been prepared by using optically active crystal violet dye. The dye was dispersed in polyvinyl alcohol used as an inert polymer binder and polyethylene oxide complexed with lithium perchlorate (LiClO 4 ) ion salt as a solid electrolyte with ethylene carbonate and propylene carbonate as plasticisers. With this blend, two cells have been prepared. In one cell, this blend is sandwiched between indium-tin-oxide-coated glass plate and aluminium plate whereas the modification of the cell is done using highly polished aluminium-coated mylar sheet in place of Al electrode. Dark I-V characteristics are measured and compared for these cells. Improvement of photovoltaic parameters has been observed in the case of polished mylar electrode.

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“…Approaches for this include light trapping by means of rough or textured interfaces [1,2] and increasing the reflectance at the backside of the absorber by replacing the traditional molybdenum back contact with a more reflective layer [3]. We have previously suggested using zirconium nitride (ZrN) as such a back-reflector layer [4].…”

Section: Introductionmentioning

confidence: 99%

Reactively sputtered ZrN for application as reflecting back contact in Cu(In,Ga)Se2 solar cells

et al. 2009

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We investigate reactively sputtered films of zirconium nitride, ZrN, for use as highly reflecting back contacts in Cu(In,Ga)Se 2 (CIGS) devices with sub-micrometer absorbers. We identify the nitrogen flow and the sputter current as the decisive parameters for the composition, and demonstrate a method for determining the nitrogen flow at which the transition from metallic to compound sputtering mode occurs for a given current. Films prepared at this working point consist of stoichiometric ZrN with a low resistivity, a high reflectance for red and infrared light, and have a fairly high sputter rate. Calculations show that the reflectance at the ZrN/CIGS interface is significantly superior to that at the standard Mo/CIGS interface.

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Modeling light trapping and electronic transport of waffle-shaped crystalline thin-film Si solar cells

Cited by 42 publications

References 2 publications

Breakdown of the efficiency gap to 29% based on experimental input data and modeling

Breakdown of the efficiency gap to 29% based on experimental input data and modeling

Effect of back electrode on photovoltaic properties of crystal-violet-dye-doped solid-state thin film

Reactively sputtered ZrN for application as reflecting back contact in Cu(In,Ga)Se2 solar cells

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