Modeling ferroelectric capacitor switching with asymmetric nonperiodic input signals and arbitrary initial conditions

Abstract

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Polarization behavior of ferroelectric multilayered composite structures

“…In the absence of a simple fundamental physical theory that can accurately predict the ferroelectric polarization as a function of applied electric field, we here make use of a convenient mathematical model developed by Miller et al 5,6 ‫ץ‬ P…”

“…In this article, we shall first give a theoretical description on poling of multilayered composite systems by considering the continuity of the total current density going through each ferroelectric layer along the poling direction. A modified model of Miller et al [5][6][7] is used for the description of the P -E relation of each ferroelectric layer. The modeling will be applied to study the switching of the bilayer PZT/polyvinylidene fluoride-trifluoroethylene P͑VDF-TrFE͒ composite investigated by Furukawa et al 1 and the poling of P͑VDF-TrFE͒ with ferroelectric triglycine sulphate ͑TGS͒ electrodes investigated by Ploss et al 8 Then we shall show the comparison between the experimental results with the theoretical predictions.…”

Modeling of poling, piezoelectric, and pyroelectric properties of ferroelectric –3 composites

“…We shall give a theoretical description of the poling process of dilute 0-3 composite systems, built up from consideration of a single-inclusion problem in which a single-ferroelectric sphere is surrounded by a linear matrix medium under the action of a uniform electric field. A modified model of Miller et al 8,9 is used for the description of the polarization-electric field ( P -E) relation of the ferroelectric constituent. The predictions of the model will be compared to experimental results of the piezoelectric properties of PZT/epoxy 0-3 composites given by Furukawa et al 10 and to our studies of piezo-and pyroelectric properties of lead titanate ͑PT͒/polyvinylidene fluoride-trifluoroethylene ͓P͑VDF-TrFE͔͒ 0-3 composites.…”

Device physics and simulation of Metal/Ferroelectric-Film/p-type silicon capacitors

“…The metal-ferroelectric-silicon (MFS) capacitor modeled in this paper is similar to that described in [3] and is shown in Fig. 1.…”

“…Studies of ferroelectric capacitors [1] and ferroelectric nonvolatile-memory field-effect transistors [2] have focused mainly on the analysis of the behavior of these devices in the SawyerTower circuit which is commonly used to measure their ferroelectric properties, and in circuits with asymmetric nonperiodic input signals with arbitrary intitial conditions [3]. In this paper, however, we model the device physics of ferroelectric capacitors fabricated on p-type silicon substrates using a simple electrostatic model, with the goal of predicting their lowand high-frequency capacitance-voltage characteristics, and relate their Cgb(VGB) hysterisis to the properties of the ferroelectric film.…”