Modeling defect transport during Cu oxidation

Goldstein, Eli A.; Gür, Turgut M.; Mitchell, Reginald E.

doi:10.1016/j.corsci.2015.05.067

Cited by 19 publications

(11 citation statements)

References 49 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…42 The defect chemistry of CuO is less studied than that of Cu 2 O; doubly ionized cation vacancies are reported to be the prevailing defects. [43][44][45] During Cu oxidation, the Cu cations diffuse outward through the growing Cu 2 O layer 44 (inward diffusion of oxygen ions is much slower 38 ). The respective ion flux under influence of the chemical potential gradient across the oxide layer is directly related to the growing oxide thickness, X, and the integration of the ion flux then results in the parabolic rate law,…”

Section: Introductionmentioning

confidence: 99%

In situ oxidation studies of Cu thin films: Growth kinetics and oxide phase evolution

Unutulmazsoy

Cancellieri

Chiodi

et al. 2020

Journal of Applied Physics

View full text Add to dashboard Cite

A comprehensive understanding of the oxidation of Cu thin films in the low-temperature regime is of fundamental interest and particularly relevant for applications in the fields of micro-and nanoelectronics, sensors, catalysis, and solar cells. The current study reports on the oxidation kinetics of PVD grown Cu thin films (20-150 nm thick) and the oxide phase evolution from Cu 2 O to CuO upon thermal oxidation in the temperature range of 100-450°C. XRD investigations in the laboratory and at the synchrotron show that the oxide phase formation critically depends on the oxidation conditions such as temperature and oxygen partial pressure. The real-time synchrotron XRD measurements reveal that the formation of the CuO phase only starts after complete oxidation of the Cu films to Cu 2 O films. In situ resistance measurements were performed to follow the oxide growth rate of Cu 2 O on Cu films in the temperature range of 100-300°C in air and in 10 mbar pO 2 . It is found that the oxidation kinetics of Cu films to Cu 2 O films follows the linear rate law, which is attributed to surface reaction controlled oxidation. The oxygen dissociation rate at the gas-solid interface is the rate-limiting process. A dramatic decrease in the linear oxidation rate is observed at low oxygen partial pressures. The fundamental differences between the oxidation rate-limiting processes of Cu as compared to other transition metal films are discussed.

show abstract

Section: Introductionmentioning

confidence: 99%

In situ oxidation studies of Cu thin films: Growth kinetics and oxide phase evolution

Unutulmazsoy

Cancellieri

Chiodi

et al. 2020

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Note that the Osuf and Osub are denoted as O1 and O2 sites in the main text (Table 3. During the catalyst synthesis and reactions, surface vacancies can be generated and may alter the activity of the catalyst. [160][161][162][163][164] This has been tested, and it is found that the coordinatively unsaturated sites (Cucus and Osuf sites) are weakly bound to the surface (consistent with the study of Mamaiti et al 121 ) and two types of surface vacancies, namely Oxygen vacancy VO (Kröger-Vink Notation) (cf Fig. 3.8b) and Cu vacancy, VCu (Kröger-Vink Notation) (cf Fig.…”

Section: Clean Surface and Surface With Vacanciessupporting

confidence: 75%

Investigating metal oxides for C1 chemistry : a computational and experimental study

Bhola¹

View full text Add to dashboard Cite

show abstract

“…The rate was observed to increase due to increased grain boundary diffusion as a result of smaller grain size. Modeling work by Goldstein and co-workers 56 suggests the copper subparticle size must be <1 μm for the Cu 2 O-to-CuO oxidation rate to be sufficiently fast for chemical looping applications.…”

Section: Introductionmentioning

confidence: 99%

Scalable Preparation of Bimetallic Cu/Ni-Based Oxygen Carriers for Chemical Looping

et al. 2020

View full text Add to dashboard Cite

Chemical looping is a promising combustion technology utilizing the cyclic oxidation and reduction of a metal oxide to transport oxygen for a variety of applications related to carbon capture and storage (CCS). The scalable manufacture of a suitable oxygen carrier is a pivotal aspect of this research field. This work surveys the experimental preparation of CuO and CuO/NiO on SiC and SiO2 substrates for chemical looping with oxygen uncoupling (CLOU) applications. A novel impregnation method that enhances the metal–support interaction to increase dispersion and reduce CuO sintering has been developed in this work. Particles prepared using this method, termed “selective adsorption wet coimpregnation”, exhibited agglomeration resistance and high reactivity over many regeneration cycles. CuO/NiO@SiO2 oxygen carrier (33 wt % CuO, 1 mol of Ni/99 mol of Cu) showed no signs of agglomeration up to 975 °C in fluidized bed testing, cycling between CuO and Cu2O. Thermogravimetric analysis showed no loss in oxygen transport capacity or decrease in kinetics over 100 cycles.

show abstract

Modeling defect transport during Cu oxidation

Cited by 19 publications

References 49 publications

In situ oxidation studies of Cu thin films: Growth kinetics and oxide phase evolution

In situ oxidation studies of Cu thin films: Growth kinetics and oxide phase evolution

Investigating metal oxides for C1 chemistry : a computational and experimental study

Scalable Preparation of Bimetallic Cu/Ni-Based Oxygen Carriers for Chemical Looping

Contact Info

Product

Resources

About