The oxidation kinetics of thin polycrystalline Ni films is of fundamental interest as well as being relevant for potential applications. It was investigated between 250 and 500 °C for 10-150 nm thick films. Even for the thinnest films, oxidation was found to be diffusion controlled. The high density of grain boundaries in the formed NiO layer leads to a tracer diffusion coefficient that is higher than reported in the literature, indicating accelerated Ni diffusion along the grain boundaries. Cr segregation to the bottom interface in doped-NiO films hindered the acceleration of the oxidation of thin films.
A comprehensive understanding of the oxidation of Cu thin films in the low-temperature regime is of fundamental interest and particularly relevant for applications in the fields of micro-and nanoelectronics, sensors, catalysis, and solar cells. The current study reports on the oxidation kinetics of PVD grown Cu thin films (20-150 nm thick) and the oxide phase evolution from Cu 2 O to CuO upon thermal oxidation in the temperature range of 100-450°C. XRD investigations in the laboratory and at the synchrotron show that the oxide phase formation critically depends on the oxidation conditions such as temperature and oxygen partial pressure. The real-time synchrotron XRD measurements reveal that the formation of the CuO phase only starts after complete oxidation of the Cu films to Cu 2 O films. In situ resistance measurements were performed to follow the oxide growth rate of Cu 2 O on Cu films in the temperature range of 100-300°C in air and in 10 mbar pO 2 . It is found that the oxidation kinetics of Cu films to Cu 2 O films follows the linear rate law, which is attributed to surface reaction controlled oxidation. The oxygen dissociation rate at the gas-solid interface is the rate-limiting process. A dramatic decrease in the linear oxidation rate is observed at low oxygen partial pressures. The fundamental differences between the oxidation rate-limiting processes of Cu as compared to other transition metal films are discussed.
Using combinatorial thermal oxidation of solid solution W 1-x Ti x precursors combined Graphical abstract: with bulk and surface analysis mapping we investigate the oxide phase formation and surface passivation of tungsten titanium oxide in the entire compositional range from pure WO 3 to TiO 2 .
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.