Modeling and test of pixel cross-talk in HgCdTe focal plane arrays

Sanders, T.J.; Caraway, E.L.; Hess, G.T.; Newsome, Gwendolyn W.; Fischer, Theodore

doi:10.1117/12.445348

Cited by 6 publications

(2 citation statements)

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“…For evaluating the diffusion length of charge carriers in the photosensitive film of FPA detectors, the spot-scan technique was often used [5][6][7][8][9]. In a spot-scan procedure, the chargecarrier diffusion-length value is deduced from spatial diode photoresponses S(x) measured in the vicinity of a local illumination spot shined onto the FPA (see Fig.…”

Section: Essence Of the Methodsmentioning

confidence: 99%

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Determination of the Bulk and Local Diffusion-Length Values of Charge Carriers in MCT Films and in the Absorber Layers of MCT-Based Photovoltaic IR FPA Detectors

Dvoretsky¹,

Васильев²,

Predein³

et al. 2015

Optoelectronics - Materials and Devices

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In the present chapter, we describe two new photoelectric-measurement-based methods that can be used for characterization of the diffusion process of charge carriers either in mercury-cadmium-tellurium (MCT) films intended for fabrication of infrared focal plane array (IR FPA) detectors or in the absorber layers of ready MCTbased photovoltaic IR FPA detectors. First-type measurements are photocurrent measurements to be performed on special test structures involving round photodiodes provided with coaxial light-shielding cap metal contacts. Second-type measurements are spot-scan measurements of MCT photovoltaic 2D IR FPA detectors traditionally used for measuring the crosstalk value of such detectors yet implemented at low and high levels of registered diode photocurrents. Both methods permit the determination of the bulk diffusion length of minority charge carriers in MCT material. The second method, in addition, permits the determination of the local effective diffusion length of minority charge carriers in the absorber-layer region under FPA diodes. The values of the bulk diffusion length of minority carriers obtained in MCT films and in the MCT absorber material of the examined middlewave and long-wave IR FPA detectors were found to be in good agreement with previously reported relevant data. The estimated value of the local effective diffusion length of minority carriers in the film region under back-biased FPA diodes proved to be consistent with a theoretical estimate of this length.

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Section: Essence Of the Methodsmentioning

confidence: 99%

“…With known mobility of minority carriers, this knowledge also permits evaluation of the lifetime of excess carriers in MCT, which is often hard to measure because of its small value. Finally, the length l d is generally regarded as a key parameter that defines the crosstalk value of FPA detectors [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Determination of the Bulk and Local Diffusion-Length Values of Charge Carriers in MCT Films and in the Absorber Layers of MCT-Based Photovoltaic IR FPA Detectors

Dvoretsky¹,

Васильев²,

Predein³

et al. 2015

Optoelectronics - Materials and Devices

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Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors

Vishnyakov

Stuchinsky

Brunev

et al. 2014

Applied Physics Letters

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Analysis of charge-carrier diffusion in the photosensing films of HgCdTe infrared focal plane array photodetectors

Vishnyakov

Stuchinsky

Brunev

et al. 2015

Journal of Applied Physics

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The lateral diffusion of minority charge carriers in the photosensitive films of photovoltaic HgCdTe infrared focal plane array (IR FPA) detectors with a continuous (without mesa insulation of the diodes) absorber layer was experimentally studied and analyzed. The experimental study was performed using the spot-scan technique, implemented by scanning a narrow strip-shaped illumination spot with a selected FPA diode at various levels of diode photocurrents in the detector. The local diffusion lengths of the charge carriers in the film regions beneath and outside the FPA diodes were estimated. The values obtained for the bulk diffusion length of minority carriers in the HgCdTe material of the examined middle-wave and long-wave IR FPA detectors were found to be in good agreement with previously reported data. Moreover, the estimated local diffusion length of minority carriers in the film region beneath the back-biased photodiodes proved to be consistent with a theoretical estimate of this length.

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Modeling and test of pixel cross-talk in HgCdTe focal plane arrays

Cited by 6 publications

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Determination of the Bulk and Local Diffusion-Length Values of Charge Carriers in MCT Films and in the Absorber Layers of MCT-Based Photovoltaic IR FPA Detectors

Determination of the Bulk and Local Diffusion-Length Values of Charge Carriers in MCT Films and in the Absorber Layers of MCT-Based Photovoltaic IR FPA Detectors

Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors

Analysis of charge-carrier diffusion in the photosensing films of HgCdTe infrared focal plane array photodetectors

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