2005
DOI: 10.1016/j.sse.2005.07.004
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Modeling and simulation of STacked Gate Oxide (STGO) architecture in Silicon-On-Nothing (SON) MOSFET

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Cited by 12 publications
(1 citation statement)
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“…High-k dielectric has numerous advantages [31][32][33], but direct deposition of HfO 2 over a silicon substrate is complex due to stability issues and can also degrade the performance of the biosensor. Therefore, HfO 2 is deposited over a thin layer of SiO 2 [34,35]. The literature survey reveals that channel doping [36,37] and source doping [38,39] must be kept low and high, respectively, to obtain superior characteristics.…”
Section: Introductionmentioning
confidence: 99%
“…High-k dielectric has numerous advantages [31][32][33], but direct deposition of HfO 2 over a silicon substrate is complex due to stability issues and can also degrade the performance of the biosensor. Therefore, HfO 2 is deposited over a thin layer of SiO 2 [34,35]. The literature survey reveals that channel doping [36,37] and source doping [38,39] must be kept low and high, respectively, to obtain superior characteristics.…”
Section: Introductionmentioning
confidence: 99%