Modeling and simulation of DC and microwave characteristics of AlInN(AlGaN)/AlN/GaN MOSHEMTs with different gate lengths

Amarnath, G.; Panda, Deepak Kumar; Lenka, Trupti Ranjan

doi:10.1002/jnm.2456

Cited by 21 publications

(6 citation statements)

References 32 publications

(83 reference statements)

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“…Moreover, the power capabilities of the AlInN channel device exhibit the higher saturation velocity and hence high-current gain cutoff frequency. 29…”

Section: Resultsmentioning

confidence: 99%

Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications

Anbuselvan¹,

Mohankumar²,

Mohanbabu³

2019

Int J Numerical Modelling

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A physics-based analytical model for quaternary AlInGaN high electron mobility transistors (HEMTs) is developed including two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) for microwave applications. The DC and RF performance characteristics are explored by considering the quasi-triangular quantum well (QW). The derived charge carrier densities n s and p s are considered for energy subbands E o and E 1 inside QW. The 2DEG sheet carrier concentration density remains constant as long as 2DHG exists. From the derived model, the drain current (I d ), transconductance current gain (g m ), and cutoff frequency (f t ) for different gate length and width are verified with experimental data for upcoming nano-scale devices.KEYWORDS two-dimensional electron gas n s (2DEG), two-dimensional hole gas p s (2DHG), AlInGaN, drain current I d , quantum well (QW), transconductance current gain g m and cutoff frequency f t

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“…Moreover, the power capabilities of the AlInN channel device exhibit the higher saturation velocity and hence high-current gain cutoff frequency. 29…”

Section: Resultsmentioning

confidence: 99%

Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications

Anbuselvan¹,

Mohankumar²,

Mohanbabu³

2019

Int J Numerical Modelling

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“…To obtain the output characteristics, 2DEG concentration, and energy band structure of GaN/InAlN MOS-HEMT and T-gate HEMT with different biomolecules, the Schrödinger equation, Poisson's equation, and carrier continuity equation are solved by self-consistent solution [34]. The physical models used in the simulation include the polarization model, Fermi-Dirac carrier statistic model, low field mobility Model, and Shockley-Read-Hall recombination model [35,36].…”

Section: Device Structure and Theoretical Modelmentioning

confidence: 99%

The study of N-polar GaN/InAlN MOS-HEMT and T-gate HEMT biosensors

Liu,

Ma,

Guo

et al. 2023

J. Phys. D: Appl. Phys.

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The sensing performance of N-polar GaN/InAlN MOS-HEMT biosensors for neutral biomolecules was investigated and compared with the Ga-polar MOS-HEMT and N-polar T-gate HEMT by numerical simulation. The results indicate that the N-polar GaN/InAlN MOS-HEMT biosensor has higher sensing sensitivity than the Ga-polar MOS-HEMT and N-polar T-gate HEMT biosensors. Furtherly, to improve the sensing performance of N-polar MOS-HEMT, the influence of cavity dimensions, GaN channel layer thickness, and InAlN back barrier layer thickness on device performance was investigated. It is demonstrated that the sensitivity of the biosensor increases as the cavity height decreases and the cavity length increases. Therefore, the sensing performance of the N-polar MOS-HEMT device will be enhanced by thinning the GaN channel layer thickness or increasing the InAlN back barrier thickness, which can be mainly attributed to the variation of the energy band structure and 2DEG concentration in the HEMT heterostructure. Finally, the highest sensitivity can be obtained for the N-polar MOS-HEMT with 6-nm-thick GaN channel layer, 30-nm-thick InAlN back barrier layer, and two 0.9-μm-long and 5-nm-high cavities. This work provides structural optimal design guidance for the N-polar HEMT biosensor.

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“…There are many studies regarding the use of new materials and different process steps in order to have a more stabilized threshold voltage V t for a normally-off MISHEMT [3, 6, 9-11, 17, 20, 21], the implementation of different geometries [22] and multiple channels [23]. A model for the 2DEG channel density has been created [24], and the study of lowfrequency noise has also been performed [13,25,26]. Lastly, in most recent studies a 1 nm thin AlN spacer layer has been placed between the AlGaN/GaN (AlGaN/AlN/GaN) in order to increase the sheet density, mobility and decrease the sheet resistance [27].…”

Section: Introductionmentioning

confidence: 99%

MISHEMT intrinsic voltage gain under multiple channel output characteristics

Canales,

Perina,

Martino

et al. 2023

Semicond. Sci. Technol.

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In this paper the MISHEMT device (Metal/Si3N4/AlGaN/AlN/GaN - Metal-Insulator-Semiconductor High Electron Mobility Transistor) is studied focusing mainly on the impact of the multiple conductions on the intrinsic voltage gain (Av). It is shown that the total drain current is composed of 3 different drain current components, whereof one is related to theMIS channel and the other two are related to HEMT channels. The device output characteristics present double drain voltage saturation that gives rise to a double plateau in the saturation region of the output characteristics. This behavior relies also on the gate voltage, so the output characteristics and analog parameters extraction are bias dependent. The intrinsic voltage gain increases thanks to the Early voltage increment in the second plateau whereHEMT conduction is dominant. Electron concentration profiles were simulated in order to investigate the device saturation regime.investigate the device saturation regime.

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Modeling and simulation of DC and microwave characteristics of AlInN(AlGaN)/AlN/GaN MOSHEMTs with different gate lengths

Cited by 21 publications

References 32 publications

Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications

Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications

The study of N-polar GaN/InAlN MOS-HEMT and T-gate HEMT biosensors

MISHEMT intrinsic voltage gain under multiple channel output characteristics

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