Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications

Abstract

A physics-based analytical model for quaternary AlInGaN high electron mobility transistors (HEMTs) is developed including two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) for microwave applications. The DC and RF performance characteristics are explored by considering the quasi-triangular quantum well (QW). The derived charge carrier densities n s and p s are considered for energy subbands E o and E 1 inside QW. The 2DEG sheet carrier concentration density remains constant as long as 2DHG exists. From the derived model, the drain current (I d ), transconductance current gain (g m ), and cutoff frequency (f t ) for different gate length and width are verified with experimental data for upcoming nano-scale devices.KEYWORDS two-dimensional electron gas n s (2DEG), two-dimensional hole gas p s (2DHG), AlInGaN, drain current I d , quantum well (QW), transconductance current gain g m and cutoff frequency f t

Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications

“…Low Al content in the AlGaN backbarrier induces negative polarization at the interface of the GaN/AlGaN channel rather than conduction band discontinuity, which provides high confinement of electrons and acts as a high barrier for presence of buffer leakage and results in high 2DEG density. 38,39…”

Investigation of Electrical Behaviors Observed in Vertical GaN Nanowire Transistors Using Extended Landauer-Büttiker Formula

“…However, the heterojunction structure of HEMTs will typically produce stress and strain that can induce spontaneous polarization. Introducing a high-quality B-doped GaN cap layer with low surface-related defects under the gate has been proven to be efficient in dealing with the polarization effect [5]- [8].…”