Modeling and simulation of a 3D-CMOS silicon photodetector for low-intensity light detection

Alirezaei, Iman Sabri; Burte, Edmund P.

doi:10.1117/12.2209042

Cited by 4 publications

(3 citation statements)

References 9 publications

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“…Derivatives dn dt and dp dt are assumed as zero in a steady-state analysis, without the lighting effect. Assuming the light in the photodiode, the photogeneration rate can be obtained from the Lambert-Beer law (11) [15]:…”

Section: Numerical Simulationmentioning

confidence: 99%

“…The decay length represents the distance where the decay occurs between dopant concentration N 0 and background doping N b . Furthermore, D j,i represents the junction depth in the i-direction, N b is background doping and N 0 is the dopant concentration within the uniformly doped region [15]. The dopants' profiles, away from the boundary, are defined in terms of the distance D from the selected boundaries, as described by (13).…”

Section: Numerical Simulationmentioning

confidence: 99%

“…The dopants' profiles, away from the boundary, are defined in terms of the distance D from the selected boundaries, as described by (13). In the equation, N a,d are the concentrations of the acceptors or donors and N 0 is the concentration of dopants at the selected boundaries [15]. Regarding the concentrations of p and n type dopants, they also vary from technology to technology.…”

Section: Numerical Simulationmentioning

confidence: 99%

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Simulation Study of Vertical p–n Junction Photodiodes’ Optical Performance According to CMOS Technology

et al. 2022

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CMOS photodiodes have been widely reported in microsystem applications. This article presents the design and numerical simulation of p–n junction photodiodes, using COMSOL Multiphysics, for three CMOS technologies (0.18 μm, 0.35 μm and 0.7 μm) and three different p–n junction structures: n+/p-substrate, p+/n-well and n-well/p-substrate. For these simulations, the depth junctions and dopant concentrations were set according to the different technologies. Then, each photodiode was spectrophotometrically characterized regarding the current, responsivity and quantum efficiency. The obtained numerical results show that the 0.18 and 0.35 μm CMOS technologies are those with the highest peak of efficiency when visible spectral ranges are needed, comparative to the 0.7 µm technology. Furthermore, the three most common p–n vertical junction photodiode structures were compared. The n+/p-substrate junction photodiode appears to be the one with the highest quantum efficiency in the visible range, which is in agreement with the literature. It can be concluded that the photodiodes’ characteristic curves and dark current values are consistent with reports in the literature. Therefore, this numerical approach allows to predict the photodiodes’ performance, helping to select the best structural design for each required application, before their microfabrication.

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Section: Numerical Simulationmentioning

confidence: 99%

Section: Numerical Simulationmentioning

confidence: 99%