Modeling and Model Reduction for Control and Optimization of Epitaxial Growth in a Commercial Rapid Thermal Chemical Vapor Deposition Reactor

Abstract

ISR develops, applies and teaches advanced methodologies of design and analysis to solve complex, hierarchical, heterogeneous and dynamic problems of engineering technology and systems for industry and government. ISR is a permanent institute of the University of Maryland, within the Glenn L. Martin Institute of TechnolAbstract In December 1996, a project was initiated at the Institute for Systems Research (ISR), under an agreement between Northrop Grumman Electronic Sensors and Systems Division (ESSD) and the ISR, to investigate the epitaxial growth of silicon-germanium (Si-Ge) heterostructures in a commercial rapid thermal chemical vapor deposition (RTCVD) reactor. This report provides a detailed account of the objectives and results of work done on this project as of September 1997. The report covers two main topics -modeling and model reduction. Physics-based models are developed for thermal, fluid, and chemical mechanisms involved in epitaxial growth. Experimental work for model validation and determination of growth parameters is described. Due to the complexity and high computational demands of the models, we investigate the use of model reduction techniques to reduce the model complexity, leading to faster simulation and facilitating the use of standard control and optimization strategies. Some of the contents of this report are contained in [34].

Selective Epitaxy of Group IV Materials for CMOS Application

“…Gas molecules diffuse/are being attracted downward through the gas boundaries toward the susceptor and finally are consumed on the Si wafer. The length of the attraction force on the gas molecules over the wafer was estimated in the range of 10-15 mm for a total pressure of 20-40 torr in the CVD reactor [33].…”

Selective epitaxy growth of Si1−xGex layers for MOSFETs and FinFETs

“…The molecules are attracted towards the dangling bonds and are then consumed. The vertical diffusion path of the gas molecules was 10-15 mm for the total pressure of 20-40 torr in an Epsilon CVD reactor [37,39]. In the case of a chip with opening arrays, a virtual volume is established as shown in Fig.…”

Current and potential future research activities in adaptive structures: an ARO perspective

“…Professor P S Krishnaprasad, see [33,34], of the University of Maryland, in the MURI program entitled Design and Control of Smart Structures being conducted under the project directorship of Professor Roger Brockett of Harvard University, is developing engineering tools for the design and fabrication of sensors and actuators based on controllable materials and for the integration of such devices in structures. Attention is focused on low-order mathematical models of hysteresis nonlinearity in magnetostrictive actuators for the prediction of performance and real-time control.…”