1987
DOI: 10.1109/t-ed.1987.22957
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Modeling and measurement of contact resistances

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Cited by 139 publications
(67 citation statements)
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“…However, by running the model for a matrix of these parameters, we identified rules that guarantee negligible current crowding. The rules are a straightforward extension of the one-resistive-electrode case [3] and simply require that , and , and . For the junctions we fabricated,…”
Section: E Generalized Resultsmentioning
confidence: 99%
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“…However, by running the model for a matrix of these parameters, we identified rules that guarantee negligible current crowding. The rules are a straightforward extension of the one-resistive-electrode case [3] and simply require that , and , and . For the junctions we fabricated,…”
Section: E Generalized Resultsmentioning
confidence: 99%
“…However, we can reduce the computational requirements of this model by flattening it to two dimensions. This approximation is very good because the potential drop in the -direction has a negligible effect on the V+ and V potential for our test structure dimensions and resistivities [3]. However, in the case of very small contact resistance, large sheet resistance, thick wiring layers, and small junctions, the third dimension would become significant.…”
Section: A Governing Equationsmentioning
confidence: 92%
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“…For example, in corrosion detection [12,17,23,24], p represents the corrosion damage profile on a non-accessible boundary, and u 0 is the electrostatic measurement made on an accessible boundary. In the study of MOSFET semiconductor devices [1,7,20,21], the Robin coefficient p contains information on the quality and location of the non-accessible metal-to-silicon contact window, and voltage measurement u 0 on an accessible part is used to extract p.…”
Section: Introductionmentioning
confidence: 99%