Modeling and improvement of a metallization system subjected to fast temperature cycle stress

Smorodin, T.; Böhm, Christoph; Gaspar, J.; Schmidt, Marek E.; Oliver, Paul; Stecher, M.

doi:10.1109/esime.2008.4525081

Cited by 4 publications

(2 citation statements)

References 10 publications

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“…The energy pulses generate high temperature gradients inside the power components: due to the device shrinkage the peak temperature may be above 300°C. Many phenomena that lead to the final device failure can be identified [1,2], namely: i) fatigue crack initiation within the elastic uncracked oxide layers (high cyclic fatigue failure); ii) low cyclic fatigue failure due to alternating stress beyond the yield limit in the metal layers and ratcheting effects; iii) creep of the metal layers.…”

Section: Introductionmentioning

confidence: 99%

Reliability characterization and FEM modeling of power devices under repetitive power pulsing

Pozzobon

Paci

Pizzo

et al. 2013

2013 IEEE International Reliability Physics Symposium (IRPS)

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In this work a combined experimental/numerical approach to describe the thermo-mechanical behavior of power devices under repetitive power pulsing is presented. Stress tests have been carried out on power DMOS implemented in Smart Power BCD technology with different Back-End Of Line (BEOL) schemes, including, for the first time, full Copper. Mechanical laboratory nano-indentation tests have been used to determine constituent properties of the metal layers. Thermo-mechanical 3D FEM modeling has been used to simulate a multi-cycle thermal loading of a whole power device with its package. Results from simulation have been qualitatively compared to experimental results. © 2013 IEEE

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Section: Introductionmentioning

confidence: 99%

Reliability characterization and FEM modeling of power devices under repetitive power pulsing

Pozzobon

Paci

Pizzo

et al. 2013

2013 IEEE International Reliability Physics Symposium (IRPS)

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show abstract

“…Contrary to that, the lower metal layers mainly consist of aluminum which is ductile (plastic deformation is possible without breaking). An anisotropic, temperature-dependent, and plastic behavior (Chaboche) material model is used, which is based on [19] and [20].…”

Section: Materials Propertiesmentioning

confidence: 99%

Efficient Simulation of Thermo-Mechanical Stress in the On-Chip Metallization of Integrated Power Semiconductors

Pham

Ritter

Pfost

2017

IEEE Trans. Device Mater. Relib.

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Integrated power semiconductors are often used for applications with cyclic on-chip power dissipation. This leads to repetitive self-heating and thermo-mechanical stress, causing fatigue on the on-chip metallization and possibly destruction by short circuits. Because of this, an accurate simulation of the thermo-mechanical stress is needed already during the design phase to ensure that lifetime requirements are met. However, a detailed thermo-mechanical simulation of the device, including the on-chip metallization is prohibitively time-consuming due to its complex structure, typically consisting of many thin metal lines with thousands of vias. This paper introduces a two-step approach as a solution for this problem. First, a simplified but fast simulation is performed to identify the device parts with the highest stress. After, precise simulations are carried out only for them. The applicability of this method is verified experimentally for LDMOS transistors with different metal configurations. The measured lifetimes and failure locations correlate well with the simulations. Moreover, a strong influence of the layout of the on-chip metallization lifetime was observed. This could also be explained with the simulation method. Index Terms-Integrated power technologies, integrated circuit modeling, power semiconductor devices, on-chip metallization, thermo-mechanical stress, degradation, reliability.

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Energy capability improvement of power DMOS transistors operating in pulsed conditions

Costachescu

Pfost

2015

Solid-State Electronics

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Modeling and improvement of a metallization system subjected to fast temperature cycle stress

Cited by 4 publications

References 10 publications

Reliability characterization and FEM modeling of power devices under repetitive power pulsing

Reliability characterization and FEM modeling of power devices under repetitive power pulsing

Efficient Simulation of Thermo-Mechanical Stress in the On-Chip Metallization of Integrated Power Semiconductors

Energy capability improvement of power DMOS transistors operating in pulsed conditions

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