Modeling and Design Methodology of High-Efficiency Class-F and Class-${\hbox{F}}^{{\hbox{-}1}}$ Power Amplifiers

Kim, Joon Hyung; Jo, Gweon Do; Oh, Jung Hoon; Kim, Young Hoon; Lee, Kwang Chun; Jung, Jae Ho

doi:10.1109/tmtt.2010.2090167

Cited by 77 publications

(47 citation statements)

References 22 publications

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“…11. Though can be nonlinear in some devices, it has been shown that the drain-to-source capacitance for a GaN HEMT device is nearly constant [18]. Since the gate-to-drain capacitance is significantly smaller than , can be considered to be approximately linear.…”

Section: Extension To Practical Pa With Parasitic Output Networkmentioning

confidence: 99%

Analysis of High-Efficiency Power Amplifiers With Arbitrary Output Harmonic Terminations

Roberg

Popović

2011

IEEE Trans. Microwave Theory Techn.

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Abstract-This paper presents an analysis of ideal power amplifier (PA) efficiency maximization subject to a finite set of arbitrary complex harmonic terminations, extending previous results where only purely reactive harmonic terminations were treated. Maximum efficiency and corresponding fundamental output power and load impedance are analyzed as a function of harmonic termination(s). For a PA restricted to second harmonic drain waveform shaping, maximum efficiency as a function of second harmonic termination is treated for cases of both purely real and complex fundamental frequency impedances. For the case of a PA restricted to second and third harmonic drain waveform shaping, peak efficiency as a function of third harmonic impedance with an ideal second harmonic termination is analyzed. Additionally, the sensitivity of PA efficiency with respect to the magnitude and phase of the second and third harmonic load reflection coefficients is examined. The analysis is extended to include device and package parasitics. The paper concludes with a discussion of how the presented general analysis method provides useful insights to the PA designer.

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Section: Extension To Practical Pa With Parasitic Output Networkmentioning

confidence: 99%

Analysis of High-Efficiency Power Amplifiers With Arbitrary Output Harmonic Terminations

Roberg

Popović

2011

IEEE Trans. Microwave Theory Techn.

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“…Class-J PA scheme [6] originates from Class-B PA while taking only two primary harmonic components of the drain current shown in Eq. (1).…”

Section: Class-j Schemementioning

confidence: 99%

“…The nonlinear classes including Class-D, Class-E [4,5], Class-F/F-1 [6,7], and Class-J [8][9][10] are recommended for high efficiency applications. In these classes, load network creates minimum possible overlap between the voltage and current waveforms, which eliminates power dissipation and enhances power efficiency.…”

Section: Introductionmentioning

confidence: 99%

Novel Design Theory for High-Efficiency and High-Linearity Microwave Power Amplifier Based on 2nd Harmonic: Enhanced Class-J

Mohadeskasaei¹,

Lin²,

Zhou³

et al. 2017

PIER M

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Abstract-In this paper, after a brief review of the previous nonlinear power amplifier (PA) classes including Class-B, Class-F, and Class-J, a novel design theory for high-efficiency and high-linearity microwave power amplifier based on 2nd harmonic component of the drain voltage and current signals is proposed. The new scheme introduces a new nonlinear class which like Class-J tunes only two primary harmonic components but unlike Class-J, the drain voltage is boosted to the maximum four times dc drain voltage. A quasi half sinusoidal waveform for the current and a quadratic sinusoidal waveform for the voltage are thus realized in this class, leading to a minimum waveform overlapping. The new class theoretically provides 93% power efficiency. It is, in fact, an enhanced Class-J with higher power efficiency and better linearity performance.

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“…The design of class-F transistor power amplifiers (PA) operating within the range of the ultrahigh frequencies shall make provisions for the actual characteristics of the transistor and the load networks impairing the efficiency of the amplifier [1]- [2]. Such parasitic elements of the transistor as output capacity C OUT and output inductance L OUT are critical for class-F power amplifier [1], [3]- [5].…”

Section: Introductionmentioning

confidence: 99%

Load network design technique for microwave class-F amplifier

Yefymovych

Krizhanovski

Giofrè

et al. 2014

2014 20th International Conference on Microwaves, Radar and Wireless Communications (MIKON)

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This paper presents the methodic design of the load network for class-F power amplifier (PA) with additional 3rd and 5th harmonics. The recommended load network equalizes the negative impact of the parasitic elements of the transistor (output capacity COUT and output inductance LOUT) on the performance of class-F power amplifier. The technique reduces the negative impact of the actual effects of the shunt capacitor CBYPASS in the supply circuit and blocking capacitor CDCBLOCK on the impedance created by the load network on the transistor chip. According to the given technique, we have designed class-F power amplifier adding the 3rd and 5th harmonics onto the operating frequency 1.6 GHz using the gallium nitride (GaN) transistor CGH60008D. Drain efficiency (ηD) 80.17%, power-added efficiency (PAE) 78.11% and output power (POUT) 38.9 dBm have been obtained through modeling on 1.6 GHz frequency

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Modeling and Design Methodology of High-Efficiency Class-F and Class-${\hbox{F}}^{{\hbox{-}1}}$ Power Amplifiers

Cited by 77 publications

References 22 publications

Analysis of High-Efficiency Power Amplifiers With Arbitrary Output Harmonic Terminations

Analysis of High-Efficiency Power Amplifiers With Arbitrary Output Harmonic Terminations

Novel Design Theory for High-Efficiency and High-Linearity Microwave Power Amplifier Based on 2nd Harmonic: Enhanced Class-J

Load network design technique for microwave class-F amplifier

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