Load network design technique for microwave class-F amplifier

Yefymovych, A. P.; Krizhanovski, V.G.; Giofrè, Rocco; Colantonio, Paolo

doi:10.1109/mikon.2014.6899939

Cited by 2 publications

(2 citation statements)

References 4 publications

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“…The current generator together with the capacitive network constitute the intrinsic device for which we define the intrinsic reference plane. To get to the actual device terminals, the so- [20] GaN HEMT F 0% 7.7 W 80.2% 2015 [21] LDMOS E 20% > 70 W 82% 2016 [22] GaN HEMT AB 27% 4.9 W 68% (PAE) 2016 [23] GaN HEMT F 62% 9÷11 W > 60% 2017 [24] GaN HEMT J 30% 4÷4.7 W 40÷50% (PAE) 2017 [ called extrinsic reference plane, there exist some structures (bonding wires, package, etc. ), that introduce linear parasitic effects that must be also considered.…”

Section: The Nonlinear-embedding Approachmentioning

confidence: 99%

Nonlinear-Embedding Design Methodology Oriented to LDMOS Power Amplifiers

Bosi

Raffo

Trevisan

et al. 2018

IEEE Trans. Power Electron.

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In this paper we apply for the first time the nonlinear-embedding technique to the design of power amplifiers based on laterally-diffused metal-oxide-semiconductor (LDMOS) field-effect transistors (FETs). Such a design technique is based on setting the transistor load line at the intrinsic current-generator plane, according to well-known theoretical guidelines. Then, the selected operating condition can be transposed at any design frequency at the extrinsic transistor terminals, by means of a model of the device nonidealities, such as the nonlinear intrinsic capacitances and the linear parasitic effects. A harmonicallytuned high-efficiency class-F and a wideband class-AB power amplifiers operating within the FM broadcasting band 88 ÷ 108 MHz based on a 10-W LDMOS are then designed and realized. To definitely assess the validity of the proposed approach for the LDMOS technology, we compare the measured performance on the fabricated power amplifiers with the expected predictions.

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Section: The Nonlinear-embedding Approachmentioning

confidence: 99%

Nonlinear-Embedding Design Methodology Oriented to LDMOS Power Amplifiers

Bosi

Raffo

Trevisan

et al. 2018

IEEE Trans. Power Electron.

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“…Experimental Studies on Class E Inverter based Induction Heater is given by Rama reddy [30]. Load network design technique for microwave class-E amplifier is presented by Krizhanovski [31]. SEPI C Converter for Power Factor Correction in Free Biomass Induction Heating System is given by Muthu [32].…”

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confidence: 99%

Closed Loop Proportional- Resonant Controlled Class E Amplifier Fed Induction Heater System

Senthil¹

2018

IJRASET

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Class-E amplifier circuit is a good interface between semi converter and induction heater. The aim of this work is to improve the dynamic response of closed loop controlled class E based IH system. Circuit modeling, simulation analysis of Proportional Resonant controlled class E based induction heating system described in the paper. Class -E amplifier is suggested in the present work to generate quick heat in the induction cooker. Class E amplifier is a simple system with single switch and reactive elements. The class E amplifier produces high frequency currents required by the load. Closed loop system with and without PR element are simulated and the corresponding results are presented. The results indicate that PR controlled CLCIH system produces faster response than PI controlled CLCIH system. Keyword: Closed loop controlled induction heating (CLCIH), Class-E amplifier induction heating system (CEAIHS), Power amplifier (PA), Proportional Resonant Controlled (PRC), and proportional integral controller(PI), I.INTRODUCTION Effect of input harmonic terminations on high efficiency class-B and class-E operation of PHEMT devices is presented by White. Device level harmonic adjust reenactments are utilized to demonstrate that high productivity can be accomplished in PHEMT class-B and class-E speakers if endeavors are made to give appropriate contribution and additionally yield consonant terminations. The simulations use a gate capacitance model which accurately describes the C/sub gs/ versus V/sub gs/ dependence for the PHEMT and are illustrated with waveform and dynamic loadline plots which relate directly to the idealized textbook view of high efficiency operation. A new method of integration control with instantaneous current monitoring for class D series-resonant converter is given by Matysik. The results of computer simulations and laboratory experiments demonstrate that the proposed methods allow controlling the converter output quantities fulfilling soft switching conditions (zero-current switching) and provide higher efficiency in comparison to other known methods [1]. Cost effective phase shifted pulse modulation soft switching high frequency inverter for induction heating applications is presented by Kifune. Theoretical equations for the soft switching operation region are derived from the practical consideration of the gate pulse control strategy, in which the soft switching operation is limited only by the duration of dead time [2]. Modeling of planar spiral inductors between two multilayer media for induction heating applications is suggested by Acero. We demonstrate the applicability of the model by a variety of examples. We present experimental results to justify the theoretical model [03]. Behaviors of Class-F and Class-F^{-1} Amplifiers is given by Moon[18]. Power Amplifier Design Methodologies for Next Generation Wireless Communications is presented by Eswaran[5]. The Continuous Class-F Mode Power Amplifier is suggested by Carrubba. Starting from the standard class-F mode, this work shows ...

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Load network design technique for microwave class-F amplifier

Cited by 2 publications

References 4 publications

Nonlinear-Embedding Design Methodology Oriented to LDMOS Power Amplifiers

Nonlinear-Embedding Design Methodology Oriented to LDMOS Power Amplifiers

Closed Loop Proportional- Resonant Controlled Class E Amplifier Fed Induction Heater System

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