Modeling and characterization of high-efficiency silicon solar cells fabricated by rapid thermal processing, screen printing, and plasma-enhanced chemical vapor deposition

Doshi, P.; Mejia, J.; Tate, K.; Rohatgi, A.

doi:10.1109/16.622596

Cited by 27 publications

(8 citation statements)

References 10 publications

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“…RTP has been used [6][7][8][9][10] for silicon solar cell fabrication including the formation of emitter and Al back surface field and firing of screenprinted Ag front grid. While RTP has been studied in the laboratory, its principle has been extended to high throughput belt furnaces heated with infrared lamps to improve device performance.…”

Section: Introductionmentioning

confidence: 99%

Rapid Thermal Processing of High Efficiency N-Type Silicon Solar Cells with Al Back Junction

Ebong

Upadhyaya

Rounsaville

et al. 2006

2006 IEEE 4th World Conference on Photovoltaic Energy Conference

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In this paper we report on the design, fabrication and modeling of 49 cm 2 , 200-mm thick, 1-5 W-cm, n-and ptype <111> and <100> screen-printed silicon solar cells. A simple process involving RTP front surface phosphorus diffusion, low frequency PECVD silicon nitride deposition, screen-printing of Al metal and Ag front grid followed by co-firing of front and back contacts produced cell efficiencies of 15.4% on n-type <111> Si, 15.1% on n-type <100> Si, 15.8% on p-type <111> Si and 16.1% on p-type <100> Si. Open circuit voltage was comparable for n and p type cells and was also independent of wafer orientation. High fill factor values (0.771-0.783) for all the devices ruled out appreciable shunting which has been a problem for the development of co-fired n-type <100> silicon solar cells with Al back junction. Model calculations were performed using PC1D to support the experimental results and provide guidelines for achieving >17% n-type silicon solar cells by rapid firing of Al back junction.

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Section: Introductionmentioning

confidence: 99%

Rapid Thermal Processing of High Efficiency N-Type Silicon Solar Cells with Al Back Junction

Ebong

Upadhyaya

Rounsaville

et al. 2006

2006 IEEE 4th World Conference on Photovoltaic Energy Conference

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“…This 2% absolute reduction in efficiency compared to the counterpart photolithography cells is associated with 7 mV decrease in V oc , 2.4 mA loss in J sc , and 0.028 reduction in FF. Detailed modeling [4] has shown that the 2% efficiency loss for screen-printed cells can be attributed to poor metal conductivity, high contact resistance (0.2%), high surface recombination (0.4%), sheet loss (0.1%), emitter doping (0.3%), AR coating and absorption in SiN (0.3%) and higher grid shading (0.5%).…”

Section: Resultsmentioning

confidence: 99%

Rapid thermal technologies for high-efficiency silicon solar cells

Ebong

Cho

Hilali

et al. 2002

Solar Energy Materials and Solar Cells

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“…P-N junction formation has not only influenced crucial electrical characteristics, but also manufacturing cost and time. Even though there are several disadvantages, screen-printing technology is used extensively for commercial solar cell manufacturing [18]. Screen printed metallization makes p-n junction contact formation more rapid, simple, and economical compared to the conventional methods such as photolithography, buried contact, and silicon ribbon technologies.…”

Section: Solar Cell Fabricationmentioning

confidence: 99%

Modified genetic programming combining with particle swarm optimization and performance criterion in solar cell fabrication

Bae

Jeon

Kim

et al. 2010

Int. J. Control Autom. Syst.

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This study describes the design and development of the novel model for the process optimization of solar cell fabrication. The model performance can affect the result of the physical experiment in the solar cell fabrication because the high accuracy model can provide the closer result to the output efficiency of the physical experiment. In this study, genetic programming (GP) based modeling technique was developed for the process simulation. GP is a global modeling technique, so it is suitable for process data modeling. This study describes the modified GP algorithm to solve the constant terminal problem. In the traditional GP, the constant term can be randomly selected within the fixed range when the structure is changed. Therefore, the variation ratio of the constant is too low to fit the model well. In this study, the novel GP is proposed. The method includes particle swarm optimization (PSO) to optimize the constant term in the terminals. PSO is a strong searching algorithm without a high computation cost. Actually, through the simulation results, the modeling performance and speed can be improved by the proposed GP. Because by the proposed modeling method, the structure and parameters of the model can be optimized simultaneously, the proposed method can be used as the new global modeling approach.

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Modeling and characterization of high-efficiency silicon solar cells fabricated by rapid thermal processing, screen printing, and plasma-enhanced chemical vapor deposition

Cited by 27 publications

References 10 publications

Rapid Thermal Processing of High Efficiency N-Type Silicon Solar Cells with Al Back Junction

Rapid Thermal Processing of High Efficiency N-Type Silicon Solar Cells with Al Back Junction

Rapid thermal technologies for high-efficiency silicon solar cells

Modified genetic programming combining with particle swarm optimization and performance criterion in solar cell fabrication

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