Modeling and Analysis on Overall Fatigue Failure Evolution of Press-Pack IGBT Device

Li, Hui; Yao, Ran; Lai, Wu‐Wei; Ren, Hai; Li, Jinyuan

doi:10.1109/ted.2019.2893455

Cited by 46 publications

(9 citation statements)

References 16 publications

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“…It should be noted that the NTC in the IGBT module is designed for over-temperature detection of long-term overload conditions, but is not suitable for transient failures such as short-circuit. Because the response speed of the internal NTC thermistor in the IGBT module is basically in seconds, while faults like short-circuit usually occur in microseconds [9]. Although the NTC and the power chips are on the same substrate, there is a certain distance between them, so the junction temperature of chips cannot be obtained directly.…”

Section: B Existing Temperature Monitoring Methodsmentioning

confidence: 99%

Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules

et al. 2022

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The overheating stress of power devices is the main cause of converter system failures, so real-time temperature acquisition, as well as timely over-temperature protection, under various operating conditions are key to achieving a more reliable energy conversion. In this paper, an improved threedimensional (3-D) coupled thermal model for insulated gate bipolar transistors (IGBTs) and related heatsink is constructed by considering the thermal coupling effects at both the device-and the module level. Furthermore, the coupled thermal impedance parameters are thereby extracted based on the finiteelement method (FEM), so that the dynamic loss and transient temperature distribution under actual working conditions can be obtained based on this electro-thermal coupling model. Meanwhile, to avoid the overheating damage of power devices due to untimely action of the negative temperature coefficient (NTC) thermistor over-temperature protection, this article aims at the idle IGBT device in the three-level neutral-point clamped (NPC) application using IGBT half-bridge modules, combined with the emitter terminal temperature, and finally realizes the multiple over-temperature protection settings. The improved temperature monitoring methods proposed in this paper are realized by the drive and control circuits and verified through simulation and experimental results.INDEX TERMS Reliability, half-bridge IGBT module, three-level NPC topology, temperature monitoring, over-temperature protection.

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Section: B Existing Temperature Monitoring Methodsmentioning

confidence: 99%

Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules

et al. 2022

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“…A thinner heatsink could help enhance Λele; however, as for the water-cooled radiators, formula (8) shows that reducing the thickness or the caliber of the internal water pipe r within the heatsink will sacrifice the fluid flow rate Qv, by multiplying the cross-sectional area of the pipe A by the flow speed v' [32]. According to formulas (2) and (3), the power loss of PP IGBT qloss is set to 2400W (150W*16), the specific heat capacity of cooling water Cp is 4.186 kJ/(kg•℃), and the density ρ is 996 kg/m 3 , assuming that the temperature difference between the inlet and outlet T is 8℃.…”

Section: B Model Simplificationmentioning

confidence: 99%

“…The failure test developed by Poller shows that micro-electrical discharge is a possible failure mode and is caused by lost contact between metal layers [7]. Moreover, once the current distribution among the IGBT chips becomes uneven, thermo-mechanical fatigue may occur at some locations that carry extreme thermal stress [8]. More concerningly, if the chips are not in sufficient contact with other components during the short-current moment, the total energy discharge reaches 16 kJ when a peak current of 357.8 kA [9].…”

Section: Introductionmentioning

confidence: 99%

Thermal and Mechanical Analyses of Clamping Area on the Performance of Press-Pack IGBT in Series-Connection Stack Application

Dai

Wang

et al. 2021

IEEE Trans. Compon., Packag. Manufact. Technol.

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“…A list of different condition monitoring techniques including its sensor requirements for conventional power modules is shown in [11]. In [13], condition monitoring on PP-IGBTs is conducted by applying the plasma-extraction transit-time (PETT) method to detect the temperature, and a controllable and flexible PETT oscillation characteristics was carried out. In [13], the overall fatigue of PP-IGBT device was analyzed but no detailed condition monitoring circuit was suggested.…”

Section: Introductionmentioning

confidence: 99%

Condition monitoring of press-pack IGBT devices using Deformation Detection Approach

Gu¹,

Wu²,

Pickert³

et al. 2021

The 10th International Conference on Power Electronics, Machines and Drives (PEMD 2020)

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Press pack Insulated Gate Bipolar Transistors (PP IGBT) are gaining more attention in HVDC power transmission systems due to their high-power density and high reliability compared with conventional power modules. Condition monitoring of PP IGBTs is normally conducted by estimating the chip temperature which is challenging to implement in practice. This paper presents a new parameter, deformation of the upper lid groove, to indicate the health condition of the PP IGBT based on its unique packaging technique. The thermal-mechanical coupled model is built by FE software in order to investigate the relationship between the deformation and junction temperature of the chips. In addition, the several feasible detection methods of deformation have been discussed and utilization of the fiber Bragg grating (FBG) sensor shows the advantages as the most appropriate approach, which can be further developed for condition monitoring using deformation measurements.

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Modeling and Analysis on Overall Fatigue Failure Evolution of Press-Pack IGBT Device

Cited by 46 publications

References 16 publications

Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules

Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules

Thermal and Mechanical Analyses of Clamping Area on the Performance of Press-Pack IGBT in Series-Connection Stack Application

Condition monitoring of press-pack IGBT devices using Deformation Detection Approach

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