We examine theoretically the performance of an Hg 0.77 Cd 0.23 Te based p-n photodetector/HFET optical receiver due to its possible application at 10.6 m free space optical communication system at high bit rate. A rigorous noise model of the receiver has been developed for this purpose. We calculate the total noise and sensitivity of the receiver. The front-end of the receiver exhibits a sensitivity of -45 dBm at a bit rate of 1 Gb/s and -30 dBm at a bit rate of 10 Gb/s, and the total meansquare noise current i 2 n =5×10 -15 A 2 at a bit rate of 1 Gb/s and i 2 n =10 -12 A 2 at a bit rate of 10 Gb/s, and a 3-dB bandwidth of 10 GHz.Free space optical communication has drawn considerable attention for applications in a number of civil and military situations such as linking of a television camera to a base vehicle, data links of a few hundred meters between buildings and wireless communication between satellites in outer space. However, successful implementation of free space optical communication largely depends on the availability of suitable atmospheric attenuation window for terrestrial applications and development of suitable sources and detectors for design of optical transmitters and receivers. For terrestrial applications, two strategic atmospheric attenuation windows e.g., 9.6 m and 10.6 m have been chosen for development of free space optical links in the long wavelength region. HgCdTe can be used to develop detectors for operation at these wavelength regions. The mole fraction of cadmium in HgCdTe can be adjusted suitably to tailor the energy band-gap of the material to match the wavelength of the above atmospheric windows. The receivers in long distance optical links are required to have high sensitivity, high speed and high gain-bandwidth product. A large number of optical receivers have been proposed and studied over the past decades to improve their performances in respect of the above characteristics. Optical receivers suitable for operation with bit rates in excess of 10 Gb/s have been realized using a variety of device technologies including heterojunction field effect and bipolar transistor amplifier coupled to p-i-n, metal-semiconductor-metal (MSM) photodetectors.