Modeling, analysis, and design of RF LDMOS devices using harmonic-balance device simulation

Rotella, F.M.; Ma, G.; Zhang, Yu; Dutton, R.W.

doi:10.1109/22.904736

Cited by 41 publications

(8 citation statements)

References 18 publications

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“…The source region and the p-body were tied together to eliminate extra surface bond wires to reduce the source inductance and improve the RF performance in a power amplifier configuration. 9) The gate oxide thickness was 135 A ˚and the mask channel length (L CH ) was 0.5 mm. The drift length (L Drift ¼ L OV þ L FOX ) was fixed at 3.6 mm in this investigation.…”

Section: Methodsmentioning

confidence: 99%

Analysis of Temperature Effects on High-Frequency Characteristics of RF Lateral-Diffused Metal–Oxide–Semiconductor Transistors

Chen

Huang

et al. 2008

jjap

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Ge quantum dot (QD) layers inserted in an intrinsic region of a Si p-i-n diode cause additional photon absorption at longer wavelengths of the solar spectrum. We studied the mechanism of carrier extraction in Ge/Si QD solar cells using photocurrent, capacitance, and photoluminescence measurements. Our findings show that the photon absorption and carrier extraction in Ge/Si QD solar cells depend strongly on the thermal annealing process to form the p-i-n diode. Control of Ge-Si interdiffusion at the Ge/Si interface during thermal annealing is critical for the increase in the conversion efficiency of Ge/Si QD solar cells. #

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Section: Methodsmentioning

confidence: 99%

Analysis of Temperature Effects on High-Frequency Characteristics of RF Lateral-Diffused Metal–Oxide–Semiconductor Transistors

Chen

Huang

et al. 2008

jjap

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“…Considerable effort is put into linearization of amplifiers at different levels, from device design and circuit-techniques up to system-level with correction techniques such as feedforward and digital pre-distortion. Analysis of the distortion generated by the device itself and its relation to detailed device parameters is still fairly limited [1][2][3][4][5][6]. In this paper, a unique harmonic balance (hb) device simulator with the capability of including external circuitry is used [1,2] to study the influence of channel engineering on linearity in RF power LDMOS devices.…”

Section: Introductionmentioning

confidence: 99%

Linearity Analysis of Laterally Graded Channel in RF Power MOSFETs

Chen¹,

Tornblad

Dutton³

2009

2009 IEEE MTT-S International Microwave Symposium Digest

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Advanced harmonic balance simulation capabilities have been used to investigate linearity behavior in RF power LDMOS devices with different laterally graded channel doping profiles. Harmonic balance analysis provides relevant device information from device-level simulations and yield performance metrics of RF circuits. The linearity behavior of a simple quasi-1D structures with different graded channel doping profiles was investigated; the analysis was then extended to a more realistic power LDMOS device. The third-order intermodulation distortion product (IM3) reveals the important role of the lateral channel doping in RF power LDMOS. The analysis lays ground-work for device optimization for improved linearity.

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“…Also, contrary to other RF devices, the LDMOS shows surprisingly high breakdown voltages and low die-to-package temperature resistance, which indicate its potential application in high-power amplifier design. This paper presents static and large-signal analyses for the LDMOS FET, and a design method to construct the high-efficiency and high-output power of a PA module by using the LDMOS FET [2].…”

Section: Introductionmentioning

confidence: 99%

“…2), and the solution is given by the (ideally) common intersection of the three circles derived from the measured data [1]. There are different methods to implement the six-port reflectometer, such as using two directional couplers and two voltage probes [2], and using three-coupled lines (coaxial lines, stripline, waveguide, or microstrip lines) [3,4]. Another way is by using a five-port junction (ring or disc) and a directional coupler [5].…”

Section: Introductionmentioning

confidence: 99%