Model of the drain current saturation in long-gate JFETs and MESFETs

The Kinetics of Joined Action of Triplet-Triplet Annihilation and First-Order Decay of Molecules in T1State in the Case of Nondominant First-Order Process: The Kinetic Model in the Case of Spatially Periodic Excitation

“…is kind of behavior, namely, the saturation of the efficiency of the process for conditions tending to the limit is observed in the case of other transport processes. e example of the setup where the saturation is observed is charge transport in structures like Junction Field-Effect Transistors (JFET) or Metal Semiconductor Field-Effect Transistors (MESFET) [13]. e saturation effect in the electronic structures is observed for drain current for JEFT and MESFET structures [13] and as well for accumulation-mode (AM) -channel siliconon-insulator (SOI) metal-oxide-semiconductor-�els-effecttransistor (MOSFET) or enhancement-mode (EM) -channel SOI MOSFET [14].…”

“…e example of the setup where the saturation is observed is charge transport in structures like Junction Field-Effect Transistors (JFET) or Metal Semiconductor Field-Effect Transistors (MESFET) [13]. e saturation effect in the electronic structures is observed for drain current for JEFT and MESFET structures [13] and as well for accumulation-mode (AM) -channel siliconon-insulator (SOI) metal-oxide-semiconductor-�els-effecttransistor (MOSFET) or enhancement-mode (EM) -channel SOI MOSFET [14]. e saturation effect in the case of electronic devices is so important that the models of charge transport developed for structures like SOI -type MOSFET [15] or high electron mobility transistors (HEMTs) based on AlGaN/GaN [16] structures have this effect as an necessary condition of correctness of the model.…”