Direct detection THz/sub-THz bolometer is proposed. In it an electromagnetic wave propagates in the bipolar semiconductor waveguide, heats electrons and holes there, and therefore creates their bipolar thermodiffusion flow and, as well as, the electromotive force (emf). The flow causes the carrier excess concentration. Both this concentration and emf are used to get the bolometer response voltage. The bolometer theoretical model is developed. The possibility without cooling or moderate cooling (about 100 K for the Cd0.2Hg0.8Te bolometers) to get acceptable for applications values of the noise equivalent power is shown. Experimental results confirm the main model conclusions.
A fast THz bolometer is proposed in which, unlike the conventional thermal one, electromagnetic radiation heats only electrons in a narrow gap semiconductor without its lattice inertial heating. Under determined conditions, this heating changes generation-recombination processes that cause the carrier number to decrease and the semiconductor resistance to rise. The Hg 0.8 Cd 0.2 Te detector noise equivalent power in the range of 77-300 K can reach ∼10 −11 W for frequencies of about 1 THz and signal gain frequency bandwidth of 1 Hz. Measurements with the device prototype confirmed the concept of the proposed bolometer creation.
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