Model of temperature dependent defect interaction and amorphization in crystalline silicon during ion irradiation

Hecking, N.; Heidemann, Klaus; Kaat, E. te

doi:10.1016/0168-583x(86)90407-6

Cited by 153 publications

(64 citation statements)

References 9 publications

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“…Probably it is a combination of types of defects. This critical level defect model was extended by Hecking et al [146] to explain their amorphization results of crystalline silicon. This model was modified by Weber [97] and by Zhang et al [148] and named the directimpact/defect-stimulated (DI/DS) model.…”

Section: Amorphizationmentioning

confidence: 99%

Diffusion of fission products and radiation damage in SiC

Malherbe

2013

J. Phys. D: Appl. Phys.

105

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A major problem with most of the present nuclear reactors is their safety in terms of the release of radioactivity into the environment during accidents. In some of the future nuclear reactor designs, i.e. Generation IV reactors, the fuel is in the form of coated spherical particles, i.e. TRISO (acronym for Triple Coated Isotropic) particles. The main function of these coating layers is to act as diffusion barriers for radioactive fission products, thereby keeping these fission products within the fuel particles, even under accident conditions. The most important coating layer is composed of polycrystalline 3C-SiC. This paper reviews the diffusion of the important fission products (silver, caesium, iodine and strontium) in SiC. Because radiation damage can induce and enhance diffusion, the paper also briefly reviews damage created by energetic neutrons and ions at elevated temperatures, i.e. the temperatures at which the modern reactors will operate, and the annealing of the damage. The interaction between SiC and some fission products (such as Pd and I) is also briefly discussed. As shown, one of the key advantages of SiC is its radiation hardness at elevated temperatures, i.e. SiC is not amorphized by neutron or bombardment at substrate temperatures above 350°C. Based on the diffusion coefficients of the fission products considered, the review shows that at the normal operating temperatures of these new reactors (i.e. less than 950°C) the SiC coating layer is a good diffusion barrier for these fission products. However, at higher temperatures the design of the coated particles needs to be adapted, possibly by adding a thin layer of ZrC.

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Section: Amorphizationmentioning

confidence: 99%

Diffusion of fission products and radiation damage in SiC

Malherbe

2013

J. Phys. D: Appl. Phys.

105

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“…Fig. 2 shows the results obtained from TRIM simulations [13] for elastic and inelastic energy transfer densities to the silicon lattice for carbon, argon and silicon ions at energies used in this study and that of [6]. Superposed are bar diagrams showing typical depth distributions of collision cascades for a single ion.…”

Section: Discussionmentioning

confidence: 99%

“…Up to now results indicate that in mono-elemental semiconductors the first mechanism dominates, while in some binary materials the reduction of binding energy seems to be more important. However, the results for silicon are based on a re-analysis of measurements done about 20 years ago using an optical reflectivity method [6]. Although many ion implantation studies in silicon have been reported in the literature during the last two decades, most of them could not be used for determining amorphization energies.…”

Section: Introductionmentioning

confidence: 99%

“…In this work, damage profiles of carbon and argon implants are determined and the extracted dependence of amorphization energies on inelastic energy transfer densities are compared with the 2 MeV self-ion implantation measurements [6] subjected to a similar analysis. …”

Section: Introductionmentioning

confidence: 99%

“…Although many ion implantation studies in silicon have been reported in the literature during the last two decades, most of them could not be used for determining amorphization energies. They were either not well enough documented to extract reliable data for this type of analysis or were performed at room temperature, where thermal effects, which are already discernible at 210 K [6], [7], [8] and [9], significantly modify defect concentration. Transition of crystalline to amorphous silicon is believed to be due to the formation of di-vacancies and diinterstitials during ion implantation, which rearrange to generate the typical five-and seven-member rings observed in the amorphous state [9] and [10].…”

Section: Introductionmentioning

confidence: 99%

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