“…13 To date there are two major bottlenecks in optimizing the performance of MeRAM devices: (1) Large perpendicular magnetic anisotropy (PMA) (higher than 2 erg/cm 2 ) to ensure the stability of the magnetic bit at room temperature; and (2) High VCMA efficiency (β ≥ 1,000 fJ/Vm) in order to replace DRAM at 7 nm node. 14,15 In recent years intense experimental 8,11,12,[15][16][17] and theoretical 9,10,[18][19][20][21][22][23] efforts have focused on understanding the possible mechanisms that govern the VCMA and identifying materials to achieve both high PMA and VCMA efficiency. Nevertheless, experimental works in Ta/Co 40 F e 40 B 20 /MgO 16,24 , Au/FeCo/MgO 25 , and Irdoped Fe/MgO 26 have reported overall rather limited values of PMA (< 2 erg/cm 2 ) and VCMA (100-300 fJ/Vm) efficiency.…”