2017
DOI: 10.1103/physrevb.96.014435
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Model of orbital populations for voltage-controlled magnetic anisotropy in transition-metal thin films

Abstract: Zhang, Jia; Lukashev, Pavel V.; Jaswal, Sitaram; and Tsymbal, Evgeny Y., "Model of orbital populations for voltage-controlled magnetic anisotropy in transition-metal thin films" (2017 Voltage-controlled magnetic anisotropy (VCMA) is an efficient way to manipulate the magnetization states in nanomagnets and is promising for low-power spintronic applications. The underlying physical mechanism for VCMA is known to involve a change in the d orbital occupation on the transition-metal interface atoms with an applied… Show more

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Cited by 91 publications
(79 citation statements)
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“…Here, E soc =<¯h L and S are orbital and spin operators, respectively. The expectation value of E soc is twice the actual value of the total energy correction to the second-order in SOC, i.e., MAE ≈ 1/2∆E soc [45,50]. Our test calculations indicate that the second-order perturbation theory is a reasonable approximation as the total MAE overall agree within a few percent accuracy with those obtained from the atom and orbital projected calculations.…”
Section: Resultssupporting
confidence: 52%
See 1 more Smart Citation
“…Here, E soc =<¯h L and S are orbital and spin operators, respectively. The expectation value of E soc is twice the actual value of the total energy correction to the second-order in SOC, i.e., MAE ≈ 1/2∆E soc [45,50]. Our test calculations indicate that the second-order perturbation theory is a reasonable approximation as the total MAE overall agree within a few percent accuracy with those obtained from the atom and orbital projected calculations.…”
Section: Resultssupporting
confidence: 52%
“…To anticipate this phenomenon, we have performed electrostatic doping calculations by changing the number of valence electrons (n e ) in the whole system (4×4 unit cell of ZnO monolayer) from n e = −1.5 to +1.5e − . This approach reflects to the charge carrier density that is confined over the metallic surface rather than exceeding to a vacuum region, which is analogues to the electric field effect by the positive and negative gating as well as chemical doping with the neighboring elements (e.g., Cu or Ga for Zn, and N or F for O site) [50].…”
Section: Resultsmentioning
confidence: 99%
“…13 To date there are two major bottlenecks in optimizing the performance of MeRAM devices: (1) Large perpendicular magnetic anisotropy (PMA) (higher than 2 erg/cm 2 ) to ensure the stability of the magnetic bit at room temperature; and (2) High VCMA efficiency (β ≥ 1,000 fJ/Vm) in order to replace DRAM at 7 nm node. 14,15 In recent years intense experimental 8,11,12,[15][16][17] and theoretical 9,10,[18][19][20][21][22][23] efforts have focused on understanding the possible mechanisms that govern the VCMA and identifying materials to achieve both high PMA and VCMA efficiency. Nevertheless, experimental works in Ta/Co 40 F e 40 B 20 /MgO 16,24 , Au/FeCo/MgO 25 , and Irdoped Fe/MgO 26 have reported overall rather limited values of PMA (< 2 erg/cm 2 ) and VCMA (100-300 fJ/Vm) efficiency.…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, we can see that the MAEs change rapidly near the E F for (Pb 2 /Fe 1 /) 2 /Pb and (Pb 2 /Fe 1 /) 3 /Pb, which is associated with the significant change of the electron occupancies on the orbitals near the E F . [38,42] Therefore, if the E F can be controlled to shift upwards or downwards, then the MAEs will be reduced or enhanced. Usually, this can be achieved by applying external electric field or injecting charge.…”
Section: Resultsmentioning
confidence: 99%