Model for the deep defect‐related emission bands between 1.4 and 2.4 eV in AlN

Lamprecht, Matthias; Jmerik, V. N.; Collazo, Ramón; Sitar, Zlatko; Иванов, С. В.; Thonke, Klaus

doi:10.1002/pssb.201600714

Cited by 16 publications

(20 citation statements)

References 54 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The final state “A 2 ” of the 1.86 eV band (data not presented here in detail, for details see Ref. ) coincides with theoretical predictions for the (V Al –O N ) complex. Finally, both the PL transitions at 1.4 and 1.68 eV seem to end on a common level A 2 *, which could either be an excited state of A 2 , or might be due to the isolated V Al .…”

Section: Resultssupporting

confidence: 82%

“…Series of PL spectra (on log scale) of another PVT grown sample recorded under cw 325 nm excitation at different sample temperatures (after Ref. ).…”

Section: Resultsmentioning

confidence: 99%

“…Also PLE spectra recorded on these samples show interrelations between excitation channels of these PL bands. More details will be presented in a forthcoming publication .…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Optical signatures of silicon and oxygen related DX centers in AlN

Thonke

Lamprecht

Collazo

et al. 2017

Phys. Status Solidi A

View full text Add to dashboard Cite

Bulk AlN crystals typically contain high concentrations of oxygen, silicon, and carbon À as also state-of-the art epitaxial layers typically do, depending on the specific growth conditions. In optical spectroscopy, such crystals show broad bands in the region from 2-5 eV in absorption and emission. We investigated several emission bands in the range from 1.4 to 1.9 eV, especially those centred at 2.0 and 2.4 eV, which under below-bandgap excitation with a 325 nm laser dominate the photoluminescence (PL) spectra both at low and at room temperature. We find clear indications that all these transitions occur between different states of the shallow donors Si or O, and deep acceptors. The donors undergo lattice relaxation and form DX centres. Depending on temperature, the initial state is either a long-lived (S ¼ 1) DXcentre state of the donors, a shallow EMT-like conventional donor state, or a free electron À with markedly different relaxation times for the optical transitions under below-bandgap excitation. The acceptor involved in these PL bands is likely linked to aluminum vacancies. Based on our data, we develop configuration coordinate diagrams and a combined level scheme for multiple transitions in the range from 1.4 to 2.4 eV.Tentative level scheme for PL bands observed in AlN in the range from 1.4 to 2.4 eV.

show abstract

Section: Resultssupporting

confidence: 82%

“…Series of PL spectra (on log scale) of another PVT grown sample recorded under cw 325 nm excitation at different sample temperatures (after Ref. ).…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Optical signatures of silicon and oxygen related DX centers in AlN

Thonke

Lamprecht

Collazo

et al. 2017

Phys. Status Solidi A

View full text Add to dashboard Cite

show abstract

“…The peak F can be attributed to the transition from V Al –O N complex to VB . The peak H should be related to a deep acceptor state induced by V Al . The spectra of 360 and 405 nm lasers can be resolved well using the above four emission lines, as shown in Figures S2 and S3.…”

mentioning

confidence: 86%

“…24 The peak H should be related to a deep acceptor state induced by V Al . 25 The spectra of 360 and 405 nm lasers can be resolved well using the above four emission lines, as shown in Figures S2 and S3. The spectrum of 514 nm laser demonstrates an apparent red-shift, so a peak K with energy of 1.40 eV, which can also be attributed to the V Al , 25 must be involved to resolve it (Figure S4).…”

mentioning

confidence: 89%

Broadband White-Light Emission from Alumina Nitride Bulk Single Crystals

et al. 2018

View full text Add to dashboard Cite

Alumina nitride bulk single crystals (AlN BSCs) were grown using a two-heater Physical Vapor Transport (th-PVT) method. The crystal contains massive lattice defects including aluminum vacancy (VAl) and oxygen substitution (ON). The photoluminescence (PL) spectrum of the crystal demonstrated a broad emission covering from 250 to 1000 nm. By study the PL spectrum, abundant midgap states in the wide band gap of AlN were nailed down. Based on the crystals, metal-AlN-metal Schottky devices were fabricated. These devices emitted high quality white light with color rendering index (CRI) over 90 under a bias of 60 V. Moreover, it was found that the white light emitting property of AlN BSCs was adjustable through changing impurity density and device structure. This research aims to pave a new way for solid-state white light source.

show abstract

A Combination of Ion Implantation and High‐Temperature Annealing: Donor–Acceptor Pairs in Carbon‐Implanted AlN

Peters

Spende

Wolter

et al. 2023

Physica Status Solidi (a)

View full text Add to dashboard Cite

Herein, carbon‐implanted high‐temperature annealed (HTA) AlN layers are analyzed and donor–acceptor pair (DAP) transitions probably between the two most abundant impurities, carbon and oxygen, are identified. Both are regarded as the main, hard‐to‐avoid impurities in crystal growth. Oxygen is believed to lead to absorption in the deep UV below a wavelength of 250 nm. In contrast, carbon is the most likely candidate to be responsible for a distinct absorption band around 265 nm. This interpretation has recently been challenged. In this study, carbon‐implanted and HTA AlN layers with ion fluences above 8.1 × 1015 cm−2 are analyzed using low‐temperature and time‐resolved cathodoluminescence spectroscopy. Due to the high concentration of oxygen inside the AlN, as a result of the HTA process, a DAP transition between a most likely carbon‐related acceptor and ON is observed. The measured temperature‐ and power‐dependent blueshift of the peak emission energy as well as the luminescence transients can be clearly explained by a continuous change from a DAP transition at low temperature to a free electron to acceptor transition with increasing temperature. The findings are supported by a configurational coordinate model that describes the measured behavior qualitatively.

show abstract

Model for the deep defect‐related emission bands between 1.4 and 2.4 eV in AlN

Cited by 16 publications

References 54 publications

Optical signatures of silicon and oxygen related DX centers in AlN

Optical signatures of silicon and oxygen related DX centers in AlN

Broadband White-Light Emission from Alumina Nitride Bulk Single Crystals

A Combination of Ion Implantation and High‐Temperature Annealing: Donor–Acceptor Pairs in Carbon‐Implanted AlN

Contact Info

Product

Resources

About