Model for the barrier diffusion into Cu interconnects at high temperatures

Aubel, Oliver; Haße, W; Hommel, M.; Koerner, Heinrich

doi:10.1016/j.mee.2005.07.063

Cited by 10 publications

(3 citation statements)

References 7 publications

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“…Such reduction of vacancies leads to a repression of electromigration induced diffusion of copper atoms in these critical interfaces. For this reason, diffusion of Ta atoms out of the liners into the copper and the critical interfaces may be the cause for the drastically increased electromigration lifetime after high temperature storage observed in our experiments [8].…”

Section: Resultsmentioning

confidence: 77%

Investigation of the influence of thermal treatment on interconnect-barrier interfaces in copper metallization systems

Aubel

Bugiel

Krüger

et al. 2006

Microelectronics Reliability

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Section: Resultsmentioning

confidence: 77%

Investigation of the influence of thermal treatment on interconnect-barrier interfaces in copper metallization systems

Aubel

Bugiel

Krüger

et al. 2006

Microelectronics Reliability

Self Cite

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“…Black's equation is very useful when two parameters are used to accelerate the time to failure. In microelectronics this equation has been used successfully in electromigration problems where both temperature and current play a role in the failure rates (4,5,6). Other applications of Black's equation are in heterojuncton bipolar transistors and humidity testing (7,8).…”

Section: Black's Equationmentioning

confidence: 99%

Semi-Empirical Equations to Estimate SOFC Lifetime

DiGiuseppe¹,

Sun²

2009

ECS Trans.

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This paper explores the possibility to estimate the SOFC lifetime using different semi-empirical equations. Several possibilities are discussed, including the advantages and disadvantages of each approach. Empirical equations are equations that fit the observed data and are not necessarily derived from first principles. Empirical equations are best suited if the SOFC has only one degradation mechanism. For instance, if the voltage-time data exhibits multiple slopes and the voltage degrades at different rates, it is very likely that multiples modes of degradation are present.

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“…It usually involves complex failure mechanisms. [1][2][3]7 Defect formation and evolution under high-current density stressing is an essential factor. Electromigration in Cu interconnect formed according to the damascene concept has been extensively studied and is well documented in the literature.…”

Section: Introductionmentioning

confidence: 99%

Electromigration behavior of Cu metallization interfacing with Ta versus TaN at high temperatures

Mardani

Norström

Smith

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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High-temperature stability of Cu-based interconnects is of technological importance for electronic circuits based on wide band gap semiconductors. In this study, different metal stack combinations using Ta or TaN as capping-and/or barrier-layer, in the configuration cap/Cu/barrier, are evaluated electrically and morphologically prior to and after high-temperature treatments. The symmetric combinations Ta/Cu/Ta and TaN/Cu/TaN are characterized by a low and stable sheet resistance after annealing up to 700 C. Asymmetric combinations of Ta/Cu/TaN and TaN/Cu/Ta, however, display an increase in sheet resistance values after annealing at 500 C and above. This increase in sheet resistance is considered to result from Ta diffusion into the grain boundaries of the Cu film. The preliminary electromigration studies on the TaN/Cu/Ta and TaN/Cu/TaN structures show a twofold higher activation energy and a tenfold longer lifetime for the former, thus suggesting an important role of the interface between Cu and the cap and/or barrier.

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Model for the barrier diffusion into Cu interconnects at high temperatures

Cited by 10 publications

References 7 publications

Investigation of the influence of thermal treatment on interconnect-barrier interfaces in copper metallization systems

Investigation of the influence of thermal treatment on interconnect-barrier interfaces in copper metallization systems

Semi-Empirical Equations to Estimate SOFC Lifetime

Electromigration behavior of Cu metallization interfacing with Ta versus TaN at high temperatures

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