Model for facet and sidewall defect formation during selective epitaxial growth of (001) silicon

Drowley, C.I.; Reid, Gillian; Hull, R.

doi:10.1063/1.99412

Cited by 75 publications

(31 citation statements)

References 8 publications

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“…In SEG the appearance of ͕111͖, ͕113͖ and ͕110͖ is widespread. [7][8][9][10][11][12][13][14] Facet formation is a common phenomenon in crystal growth because the growth rate varies with the crystallographic orientation. 15 Facet formation makes possible the fabrication of new types of vertical metal-oxide-semiconductor ͑MOS͒ transistors 16 and nanoscale structures on micrometer scale patterns.…”

Section: Introductionmentioning

confidence: 99%

Facet investigation in selective epitaxial growth of Si and SiGe on (001) Si for optoelectronic devices

Vescan

Grimm

Dieker

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The facet evolution and growth rate of Si on {hkl} facets were investigated in the temperature range 700–850 °C using multilayer structures with thick Si and very thin SiGe markers prepared by selective epitaxial growth using low pressure chemical vapor deposition. The most stable facet, observed at all temperatures, is the high index plane {113}. It is the dominant facet up to the top of all mesas (∼1μm thick). Even at the corners of square dots steep {113} facets developed [angle of 72° with the (001) plane]. Several facets reported here are observed for the first time. In the 〈110〉 zone it is the {119} facet, while in the 〈100〉 zone two facets with Miller indices h≠k≠l≠h, the {018} and {0 1 12}, are found. The measured growth rate relationship is R111<R110<R113<R018<R119<R0112<R001. The activation energy of the growth rate Rhkl on the facet is roughly equal to the activation energy for growth on (001), which implies that the same step involved in the deposition limits the growth rate on (001) and on {hkl} surfaces (at least for the {111} and {113} facets). Only the {113} and {110} facets extend and grow from the beginning of the epitaxy up to the top. The first demonstration of photoluminescence from SiGe quantum wells grown on {113} Si is given.

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Section: Introductionmentioning

confidence: 99%

Facet investigation in selective epitaxial growth of Si and SiGe on (001) Si for optoelectronic devices

Vescan

Grimm

Dieker

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Facet generation is a kind of natural phenomenon on crystal growth, depending on several factors such as SEG condition, neighboring dielectric materials, pattern directions, etc. 5,6,15 In LPCVD system, facets are easy to form under the low ESR condition, where the dynamic force equilibrium can be reached among surface energies of SEG growing planes and neighboring insulators. Therefore, SEG facets were much enhanced in the last of this one-step growing conditions.…”

Section: A Selective Epitaxial Growth Plug Processmentioning

confidence: 99%

Selective epitaxial growth for plugs of high-density devices

Cheong

Lee²,

Roh³

2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…26,28,29,35 In the initial stage of the growth, the ͑311͒ plane is the dominant facet. However, as the growth proceeds, the ͑111͒ facet appears and expands rapidly.…”

Section: A Seg Morphology Change With Growth Conditionsmentioning

confidence: 99%

Isotropic/anisotropic growth behavior and faceting morphology of Si epitaxial layer selectively grown by cold wall ultrahigh vacuum chemical vapor deposition

Lim

Song

Yoon

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Si epitaxial layers were selectively grown on local oxidation of silicon patterned Si (100) substrates by the cold wall ultrahigh vacuum chemical vapor deposition under various growth conditions. The isotropic/anisotropic growth behavior and the faceting morphology of Si epitaxial layers were systematically investigated. As the growth temperature increased and the Si2H6 flow rate decreased, the lateral overgrowth of Si was reduced, and subsequently the anisotropic selective epitaxial growth (SEG) of Si was enhanced. Depending on growth conditions, the lateral overgrowth was not initiated until the layer thickness exceeded a critical value, and the degree of lateral overgrowth was changed with the layer thickness. These observations strongly imply that the mass transport and accumulation processes on facet surfaces play an important role in the SEG morphological change. Taking both surface mass transport and free energy change into account, a model is proposed to explain our experimental observations, and the detailed discussion is provided. Finally, we confirmed the proposed model through the experimental and theoretical analysis of the Si growth rate change on the (111) facet plane with facet length, which highlights the strong dependence of the mass transport and accumulation processes on the difference between facet length and surface diffusion length.

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Model for facet and sidewall defect formation during selective epitaxial growth of (001) silicon

Cited by 75 publications

References 8 publications

Facet investigation in selective epitaxial growth of Si and SiGe on (001) Si for optoelectronic devices

Facet investigation in selective epitaxial growth of Si and SiGe on (001) Si for optoelectronic devices

Selective epitaxial growth for plugs of high-density devices

Isotropic/anisotropic growth behavior and faceting morphology of Si epitaxial layer selectively grown by cold wall ultrahigh vacuum chemical vapor deposition

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