Model experiments and numerical simulations for directional solidification of multicrystalline silicon in a traveling magnetic field

Dadzis, K.; Ehrig, Jan; Niemietz, K.; Pätzold, O.; Wunderwald, U.; Friеdrich, J.

doi:10.1016/j.jcrysgro.2011.08.009

Cited by 35 publications

(10 citation statements)

References 32 publications

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“…4b). The stronger the F L , the higher gets the maximum velocity in the melt, which is then far above typical DS flow velocities of about 0.1-2 Â 10 À 2 m/s [22,23]. The variation in these values is due to furnace-dependent horizontal temperature differences in the melt responsible for the strength of buoyancy forces.…”

Section: Resultsmentioning

confidence: 92%

Characterization of mc-Si directionally solidified in travelling magnetic fields

Kiessling

Büllesfeld

Dropka

et al. 2012

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 92%

Characterization of mc-Si directionally solidified in travelling magnetic fields

Kiessling

Büllesfeld

Dropka

et al. 2012

Journal of Crystal Growth

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“…Through replacing the fundamental constants for silicon instead of GaInSn in the Reynolds and forcing parameters numbers and changing the system parameters (I and B) so that these dimensionless numbers remain constant, the same flow structures will be obtained for a silicon melt, as it was done for example in Ref. [31]. General predictions about the flow structure found so far are only valid for this kind of aspect ratio of the geometry and electrode positioning.…”

Section: Discussionmentioning

confidence: 81%

“…In order to perform a scaling analysis of our system, similar to that performed in [31] and discussed in [32,33] the governing equation (2) will be rewritten in a dimensionless form, with the goal to reveal nondimensional parameters of physical importance to describe a specific system state. In the case of multiple relevant length scales (e.g.…”

Section: Scaling Analysis Relevant Dimensionless Parametersmentioning

confidence: 99%

Numerical and experimental modeling of melt flow in a directional solidification configuration under the combined influence of electrical current and magnetic field

Negrila

Popescu

Vizman

2015

European Journal of Mechanics - B/Fluids

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“…The application of TMF during solidification of the Al-Si-Sn melt induces a recirculating flow in the radialmeridional plane, which consists of a double-vortex structure. Hence, a strong outward flow from the axis of the ingot towards the solidification front occurs where symmetrical segregation channels emerge [14,[18][19][20] . Such periodical flow structure, carrying the bulk liquid with higher Si content, promotes the growth of the primary Si formed close to the inner wall of the crucible where the temperature is lower.…”

Section: (B)-(d)mentioning

confidence: 99%

Separation of primary Si and impurity boron removal from Al-30%Si-10%Sn melt under a traveling magnetic field

et al. 2016

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C rystalline silicon is one of the materials used for solar cells, accounting for over 90% of the photovoltaic (PV) materials [1] . However, the PV industry has to face a serious low-cost feedstock supply shortage due to a rapid expansion of the solar cell industry. To lower the production cost of Si solar cells, a promising way is to upgrade metallurgical-grade silicon (MGSi) to solar-grade silicon (SoG-Si) with metallurgical treatments [2][3][4][5] . However, boron (B) element, an impurity in MG-Si, cannot be removed efficiently because of its low vapor pressure (lower than that of Si) [6] and large segregation coefficient (0.8 at 1,414 ºC) [7] . In recent years, considerable progress has been made in B removal from the MG-Si using hypereutectic Al-Si alloy solidification refining process at low temperatures [8][9][10][11] . In the alloy solidification process, the primary Si initially precipitates from supersaturated melt with decreasing Abstract: Separation of primary Si phase and removal of boron in the primary Si phase during the solidification process of the Al-30%Si-10%Sn melt under a traveling magnetic field (TMF) were investigated. The results showed that the agglomeration layer of the primary Si can be formed in the periphery of the ingot while the inner microstructures mainly consist of the eutectic α-Al+Si and β-Sn phases. The intense melt flow carries the bulk liquid with higher Si content to promote the growth of the primary Si phase which is first precipitated close to the inner wall of crucible with a relatively lower temperature, resulting in the remarkable segregation of the primary Si phase. The content of impurity B in the primary Si phase can be removed effectively with an increase in magnetic flux intensity. The results of electron probe microanalysis (EPMA) clearly indicated that the average intensity of the B Ka line in the α-Al phase region of Al-Si-Sn alloy is higher in the case of solidification under TMF than that of normal solidification condition, suggesting that the electromagnetic stirring can promote the B removal from the primary Si phase. temperature, during which more impurities, especially B, are enriched in the alloy by redistributing the impurities to the solid/liquid (S/L) interface. Adding pure Sn to the hypereutectic Al-Si alloy can effectively expand the crystallization temperature range to promote the growth of the primary Si [12,13] . However, considering the diffusion kinetics of the impurities at the nearby growing Si surface, a more effective enhanced S/L segregation tendency of impurities has not been achieved.In the present study, the traveling magnetic field (TMF) was applied during solidification of the Al-30%Si-10%Sn melt to separate the primary Si. Furthermore, the effect of the electromagnetic stirring on B removal from the primary Si during the solidification of the Al-30Si-10Sn melt was investigated. Experimental procedureCommercial purity Al (99.7 wt.%), Sn (99.99 wt.%) and MG-Si (99.7 wt.%) (all the compositions quoted in this work are in wt.% unless ot...

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Model experiments and numerical simulations for directional solidification of multicrystalline silicon in a traveling magnetic field

Cited by 35 publications

References 32 publications

Characterization of mc-Si directionally solidified in travelling magnetic fields

Characterization of mc-Si directionally solidified in travelling magnetic fields

Numerical and experimental modeling of melt flow in a directional solidification configuration under the combined influence of electrical current and magnetic field

Separation of primary Si and impurity boron removal from Al-30%Si-10%Sn melt under a traveling magnetic field

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