Model-based uniformity control for epitaxial silicon deposition

Gower-Hall, Aaron; Boning, Duane S.; Rosenthal, P.; Waldhauer, A.

doi:10.1109/tsm.2002.801368

Cited by 6 publications

(1 citation statement)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Another limitation of interaction analysis is that it does not consider constraints on the MVs. These constraints are based on a number of criteria, including machine and safety limitations, undesirable effects on uncontrolled outputs, and settings beyond which the unit process cost is known to increase [18]. Previous works have been published to overcome these limitations.…”

Section: Recipe Optimizationmentioning

confidence: 99%

Advanced profile control and the impact of sidewall angle at gate etch for critical nodes

et al. 2008

View full text Add to dashboard Cite

Gate patterning is critical to the final yield and performance of logic devices. Because of this, gate linewidth control is viewed by many as the most critical application for integrated metrology on etch systems. For several years, integrated metrology and wafer-level process control have been used in high volume manufacturing of 90 and 65nm polysilicon gate etch [1], [3], [17], [22]. These wafer-level CD control systems have shown the ability to significantly reduce CD variation. With gate linewidth under control (< 2nm 3σ wafer-to-wafer), the next parameter to impact gate electrical performance is side wall angle (SWA). SWA had not been considered a critical control parameter due to the difficulty of measurement with conventional scanning electron microscope (SEM). With scatterometry, SWA measurement of litho and etch profiles are included with the critical dimension (CD) measurements. Recently, it has become visible that the polysilicon SWA correlates to electrical device parameters, and is thus, an important parameter to control. This paper will examine the current relationship between litho and etch profile control, determine potential limitations for future technology nodes, and introduce novel etch process control techniques based on multiple input multiple output (MIMO) modeling.

show abstract

Section: Recipe Optimizationmentioning

confidence: 99%