Model and Characterization of Persistence in HgCdTe SWIR Detectors for Astronomy Application

Goff, T. Le; Pichon, Thibault; Baier, N.; Gravrand, O.; Boulade, O.

doi:10.1007/s11664-022-09854-7

Cited by 1 publication

(1 citation statement)

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“…Commonly used SWIR optoelectronic materials including InGaAs, − HgCdTe, − PbS, − and mainstream InGaAs SWIR imaging chips have been commercially available for a long time. − However, there are some technical difficulties, such as small substrate diameter, high wafer cost, expensive chip manufacturing cost, low yield rate, and toxicity. , In addition, these SWIR chips are not compatible with the CMOS process production lines, which require a separate production line to avoid inevitable contamination. Group IV Ge (Sn) semiconductor material was regarded as one of the most promising candidates to overturn the current SWIR imaging technology due to their excellent photoelectric response in the SWIR band and compatibility with the standard CMOS process, thereby making Ge an ideal absorption layer for the high-performance SWIR photodetectors. − …”

Section: Introductionmentioning

confidence: 99%

High-Performance Ge PIN Photodiodes on a 200 mm Insulator with a Resonant Cavity Structure and Monolayer Graphene Absorber for SWIR Detection

Yu,

Zhao,

Miao

et al. 2024

ACS Appl. Nano Mater.

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High-responsivity and low dark current resonant-cavity-enhanced (RCE) Ge PIN photodiodes with a monolayer graphene absorber were demonstrated on a 200 mm insulator. Ge was grown on the donor Si wafer, whereas the acceptor wafer contained a two-period poly-Si/SiO 2 as a distributed Bragg reflector (DBR) mirror. Then, a direct wafer-bonding technique was adopted to transfer the Ge layers on the poly-Si/SiO 2 DBR mirror, thereby forming the RCE Ge PIN photodetectors on the insulator with mesa diameters ranging from 10 to 100 μm. At −1 V reverse bias voltage, average responsivities of 0.67 and 0.85 A/W at 1550 and 1310 nm were achieved due to the combined function of poly-Si/SiO 2 DBR mirror, high-quality Ge active layer, and 2D graphene. The monolayer graphene was transferred from a Cu foil on the chips, which increased the responsivity of the Ge PIN photodetectors at 1310 and 1550 nm by 11.6 and 7.6%, respectively. The dark currents of the detectors at room temperature were in the nanoampere range, for example, the 10 μm detector exhibited a dark current of 5.75 nA. The novelty of our results is based on the integration of a novel DBR mirror below the Ge PIN photodetectors with a graphene absorber on the top. This indicates a significant improvement in the performance of the current Ge PIN photodetectors and a promising technique route to optimize the low-cost and CMOS-compatible short-wave infrared imaging chips in the near future.

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