High-Performance Ge PIN Photodiodes on a 200 mm Insulator with a Resonant Cavity Structure and Monolayer Graphene Absorber for SWIR Detection
Jiahan Yu,
Xuewei Zhao,
Yuanhao Miao
et al.
Abstract:High-responsivity and low dark current resonant-cavity-enhanced (RCE) Ge PIN photodiodes with a monolayer graphene absorber were demonstrated on a 200 mm insulator. Ge was grown on the donor Si wafer, whereas the acceptor wafer contained a two-period poly-Si/SiO 2 as a distributed Bragg reflector (DBR) mirror. Then, a direct wafer-bonding technique was adopted to transfer the Ge layers on the poly-Si/SiO 2 DBR mirror, thereby forming the RCE Ge PIN photodetectors on the insulator with mesa diameters ranging fr… Show more
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